| Sol-gel法制备BZT铁电薄膜及其电性能的研究 |
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| 引用本文： | 印志强.Sol-gel法制备BZT铁电薄膜及其电性能的研究[J].绥化学院学报,2009,29(4):176-178. |
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| 作者姓名： | 印志强 |
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| 作者单位： | 绥化学院物理与电子信息系,黑龙江绥化,152061 |
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| 摘 要： | Sol-gel法制备BZT铁电薄膜,用X射线衍射仪(BSX3200)和扫描电子显微镜研究了BZT的结构和表面形貌,用差热-热失重(TG-DTA)析谱分析BZT粉体的退火工艺.测定了薄膜的电性能:薄膜不加偏压下的介电常数大约为620左右,介电损耗和调谐量分别为0.0335和48.63%.
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| 关 键 词： | Sol-gel法 介电性能 损耗因子 |
Study on sol-gel Preparation BZT Ferroelectric Thin Films and their Electrical Properties |
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| Yin Zhiqiang.Study on sol-gel Preparation BZT Ferroelectric Thin Films and their Electrical Properties[J].Journal of Suihua University,2009,29(4):176-178. |
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| Authors: | Yin Zhiqiang |
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| Abstract: | Sol-gel Preparation BZT ferroelectric thin films. The structure and surface morphology of BZT thin films were in-vestigated by X-ray diffraction and scanning electron microscopy,the annealing process of films were investigated by TG-DTA.The electrical properties of the film was mensured:The film dielectric constant of about 620 without bias,the dielectric loss and tenabiLi-ty of the film were 0.0335 and 48.63%. |
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| Keywords: | sol-gel dielectric properties loss factor |
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