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Effect of annealing on wet etch of amorphous IGZO thin film |
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| Authors: | Long-long Chen Ji-feng Shi Qian Li Xi-feng Li and Jian-hua Zhang |
| Institution: | (1) School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore, 639798, Singapore;(2) Institute of Materials Research and Engineering, A*STAR (Agency for Science, Technology and Research), 3 Research Link, Singapore, 117602, Singapore; |
| Abstract: | Amorphous InGaZnO (a-IGZO) film is deposited on the glass substrate by radio-frequency sputtering and the influence of annealing on wet etch of a-IGZO films were investigated. The results show that etch rate of IGZO films decrease with the increase of annealing temperature. Etching taper angle is less than 60° and critical dimension (CD) loss is less than 1 μm in over-etching time of 30 s. The fact implies that IGZO films etching with oxalic acid may be a good wet etching way for the thin-film transistor (TFT) array process. |
| Keywords: | amorphous InGaZnO （a-IGZO） annealing etching |
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