| 3d过渡金属掺杂II-IV-V_2黄铜矿半导体的电磁性质 |
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| 引用本文： | 林琦.3d过渡金属掺杂II-IV-V_2黄铜矿半导体的电磁性质[J].宁德师专学报(自然科学版),2006(4). |
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| 作者姓名： | 林琦 |
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| 作者单位： | 宁德职业技术学院 福建福安355000 |
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| 摘 要： | 利用自旋局域密度泛函的第一性原理对3d过渡金属(TM=V、Cr、Mn、Fe、Co和N i)掺杂的II-IV-V2(CdGeP2和ZnGeP2)黄铜矿半导体进行系统计算.结果发现:V-、Cr-和N i-掺杂的CdGeP2和ZnGeP2将出现铁磁状态(FM),而Mn-、Fe-以及Co-掺杂的CdGeP2和ZnGeP2将出现反铁磁状态(AFM).
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| 关 键 词： | 稀磁半导体(DMS) 过渡金属 双交换作用 铁磁状态 |
Electronic and magnetic properties of 3d transition metal-doped II-IV-V_2 chalcopyrite semiconductor |
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| LIN Qi.Electronic and magnetic properties of 3d transition metal-doped II-IV-V_2 chalcopyrite semiconductor[J].Journal of Ningde Teachers College(Natural Science),2006(4). |
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| Authors: | LIN Qi |
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| Abstract: | A systematic study based on abinitio calculation within local spin density approximation(LSDA) is applied to material design of II-IV-V_2 chalcopyrite semiconductor(CdGeP_2 and ZnGeP_2) doped by 3d-TM(TM=V,Cr,Mn,Fe,Co and Ni).It is found that the ferromagnetic(FM) state will be realized in V-,Cr-and Nidoped CdGeP_2 and ZnGeP_2,whereas for Mn-,Fe-and Co-doped ones,the antiferromagnetic(AFM) states are more stable than FM states. |
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| Keywords: | dilute magnetic semiconductor(DMS) transition-metal double exchange ferromagnetic state |
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