双极晶体管CB反偏结ESD失效的检查及分析

前期研究发现，部分高频小功率硅双极晶体管对静电放电最敏感的端对不再是人们通常认为的EB反偏结，而是CB反偏结。针对这一现象，采用多种技术，对从CB反偏结注入静电放电造成失效的器件的内部损伤点进行了详细的剖析，讨论了此类高频硅双极晶体管出现明显失效时的静电放电（ESD）失效机理，为新时期器件抗静电性能的提高奠定了新的基础。

ESD Failure Inspection and Analysis on CB Reverse Junction of Bipolar Transistors

Former research revealed that the most ESD sensitive port of partial high-frequency Silicon bipolar transistors is not the EB reverse junction as people know,but is the CB reverse junction.We use many technologies to analyze the inside damage point of the transistors which is failure because of the ESD injection to CB reverse junction.Different failure models were discussed.All the conclusions established the new foundations of improving devices' anti-statistic ability for the future.