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高压下GaN的电子性质理论探究
引用本文:冯春杰,郭笑天等.高压下GaN的电子性质理论探究[J].安顺学院学报,2013(6):124-126.
作者姓名:冯春杰  郭笑天等
作者单位:安顺学院整理学院,贵州安顺561000
摘    要:文章基于密度泛函理论讨论了(闪锌矿结构(B3)和氯化钠结构(B1))GaN的晶体结构、相变压强和弹性性质。并用等焓原理获得B3→B1的相变压强为44.6Gpa,与相关的理论结果吻合较好。根据弹性模量与弹性常数的关系,详细讨论了B3→B1弹性性质随着压强的变化关系。

关 键 词:相变  弹性性质  GaN

Theoretica Investigation of Electraonic Properties of Gan under High Pressure
Feng Chunjie,Guo Xiaotian,Zhang Zaiyu.Theoretica Investigation of Electraonic Properties of Gan under High Pressure[J].Journal of Anshun College,2013(6):124-126.
Authors:Feng Chunjie  Guo Xiaotian  Zhang Zaiyu
Institution:1.2.3. Anshun University, Anshun 561000, Guizhou, China)
Abstract:The crystal structures.phase transition and elastic properties of GaN have been carried out based on density functional theory. Using the enthalpy-pressure data, we have observed the B3 to B1 structural phase transition pressure at 44. 6Gpa, it is well consistent with relevant theoretical results. According to the relation between elastic module and elastic constants, we study elastic properties of GaN with varying pressure in detail.
Keywords:phase transition  elastic properties  GaN
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