磁调节二维电子的输运

研究了电子通过一般的真实磁调节纳米结构的隧穿性质,其中磁调节纳米结构由被磁化的细长磁条沉积在典型的GaAs/GaAlAs 半导体异质结表面上形成的。电子隧穿这种磁纳米结构展示了有趣的波矢滤波特色,而且,其共振隧穿性质强烈地依赖于磁条被磁化的方位。这些结果暗示了调节系统中磁条的磁化方向可以剪裁这类磁纳米结构中电子的隧穿性质。

Transport of Magnetically Modulated Two-Dimensional Electrons

We have investigated theoretically the transport properties of electrons in the generic realistic magnetically modulated nanostructures, which are produced by depositing a ferromagnetic stripe on the top of a typical GaAs/GaAlAs heterostructure. It is shown that the electronic tunneling through this type of magnetic nanostructures not only displays an interesting wave-vector-filtering feature but also is strongly dependent upon the ferromagnetic stripe magnetizations. The results imply that one can tailor the electronic tunneling properties in magnetically modulated nanostructures by means of adjusting the magnetization direction of ferromagnetic stripes.