首页 | 本学科首页   官方微博 | 高级检索  
相似文献
 共查询到20条相似文献,搜索用时 328 毫秒
1.
StressAnalysisoftheGlassBulbof35-inch(V)120°ColorPictureTubeTorongeyPeterKimanus(MoiUniversity,DepartmentofPhysics,P.O.Box390...  相似文献   

2.
全国各级成人学校基本情况BasicStatisticsofAdultSchoolsinChinabyLevel&Type¥//(A):Ofthetotal:TheRegularShort-CycleCoursesinRadio/TVUniversit...  相似文献   

3.
LOCALINFLUENCEANALYSISBASEDONTHEK-LDISTANCEANDTHEINFORMATIONDISTANCEHuYueqing(胡跃清)(DepartmentofMathematicsandmechanics)LOCALI...  相似文献   

4.
ABIFURCATIONANALYSISOFTHESTEADY-STATEMODELFORAMULTIJUNCTIONDEVICECaoJuncheng(曹俊诚);WeiTongli(魏同立)(MicroelectronicsCenter)WangY...  相似文献   

5.
S.T.Coleridge──AnImaginaryPoet¥CuiShuzhenSamuelTaylorColeridge(1772-1834)isoneofthegreatestromanticpoetsinearlynineteenth-cen...  相似文献   

6.
AdaptiveConsistentParameterEstimationforNon-GaussianMAProcessesUsing4thOrderCumulantWangXinwen(王新文)HeZhenya(何振亚)(Departmentof...  相似文献   

7.
FlexuralBehaviourofHigh-StrengthSteelFiber-ReinforcedConcreteBeamsQianChunxiang(钱春香)(DepartmentofMaterialsScienceandEngineeri...  相似文献   

8.
信息世界     
微软推出MSDN和TechNetMicrosoftMSDN和MicrosoftTechNet是微软公司两项面向不同对象的付费基于只读光盘(CD-ROM)的订购产品。MicrosoftMSDN产品分为三个级别,开发库是软件开发者必备的最新最全的资料;...  相似文献   

9.
High-PerformanceNetworkCommunicationsforCSCWSongJun(宋军)GuGuanqun(顾冠群)(DepartmentofComputerScienceandEngineering,SoutheastUni...  相似文献   

10.
目前已确定了[(CH3)4Si)、[(CH3)3SiOSi(CH3)3SiO-)]、[(-(CH3)2SiO-)3)、[(-(CH3)2SiO-4)及[(-(CH3)2SiO-)5]在297±2K温度下与OH、NO3根及O3的气态反应的速度常数。它们与OH根NO3根及O3的气态反应的速度常数分别为(单位为cm3/克分子·秒):[(CH3)4Si]:1.00±10-12,<8×10-17,<7×10-21;[(CH3)3SiO(CH3)3〕:1.38×10-12,<8×10-17,<7×10-21;[(-(CH3)2SiO-)3]:5.2×10-13,<2×10-16,<3×10-20;[(-(CH3)2SiO-)4]:1.01×10-12,<2×10-16,<3×10-20;[(-(CH3)2SiO-)5〕:1.55×10-12,<3×10-16,<3×10-20。对于这些化合物的对流层迁移过程,它们与NO3根及O3的反应是无关紧要的。在对流层中,这些易挥发的有机硅化合物因与OH根反应而引起的计算寿命的变化范围为从[(-(CH3)2SiO-)5)的10天到[(-(CH3)2SiO-〕3]的30天。  相似文献   

11.
EpitaxialGrowthofYSZasBuferLayersforHighTcSuperconductingFilmsonSiSubstratesQianWensheng(钱文生)LiuRong(刘融)WeiTongli(魏同立)(Milroe...  相似文献   

12.
用阳极氧化法在Ti基片上制备出TiO2薄膜,然后通过电化学沉积法将Co-Pi和Cu2O沉积在TiO2薄膜表面.通过扫描电镜、X-射线衍射和光电化学性质测试,发现TiO2薄膜表面先沉积Co-Pi能够有效阻止Cu2O颗粒堆积,光电流显著提高.而先沉积Cu2O后沉积Co-Pi,则会使Cu2O还原为Cu,同时形貌发生改变.特别地,沉积300秒Co-Pi后再沉积Cu2O颗粒,能得到200 mA/cm2的最大光电流.  相似文献   

13.
SwitchingPhenomenaofCuTCNQInducedMainlybytheInteractionamongMicrocrystalineGrainsGuNinga1(顾宁)ShengHaoyingb(沈浩瀛)LuWua1(鲁武)Pan...  相似文献   

14.
1 Introduction Tindioxidefilmshavebeenwidelyusedasconductiveelectrodes,transparentcoatings,andheterojunctionsolarcells.SnO2filmswithdifferentstructurescanbeconstructedbychemicalvapordepositiononsubstratesofdifferenttemperatures.AboafandMarcotte[1]pr…  相似文献   

15.
Fluidized chemical vapor deposition (FCVD) technology was developed for coating SnO2 thin film on ultrafine Al2O3 particles.Transmission electron microscopy (TEM) and high-resolution electron microscopy (HREM) analyses demonstrated that SnO2 films with different structures were deposited through controlling the coating temperature, reactant concentration, etc.. Nanocrystalline SnO2 film was formed at 572.15K by gas phase reaction of SnCl4 and H2O.Electron probe microanalyser (EPMA) and energy dispersive spectrometer (EDS) analyses indicated that the distribution of nanocrystalline SnO2 over inner and outer part of the Al2O3 agglomerates was homogeneous.  相似文献   

16.
利用磁控溅射的方法在n型硅基底制备了Cu/CoN/Si(100)和Cu/CoSiN/Si(100)薄膜,并对它们进行了不同温度的退火.用原子力显微镜观察了它们的表面形貌.用扫描透射电镜能谱分析法得到了在不同退火温度下铜在上面两种薄膜中浓度与表面距离的分布,然后利用菲克第二定律对Cu/CoN/Si和Cu/CoSiN/Si体系中cu的扩散进行了计算和分析,得出中温条件(300℃-700℃)下Cu在CoN和CoSiN两种薄膜中的扩散系数表达式分别为8.98×10^-13exp(-0.45eV/kT)cHf/s和5.39×10^-11exp(-0.49eV/kT)Cm2/s.  相似文献   

17.
Nano-particles lanthanum-modified lead titanate (PLT) thin films are grown on Pt/Ti/SiO2/Si substrate by liquid source misted chemical deposition (LSMCD). PLT films are deposited for 4-8 times, and thenannealed at various temperature. XRD and SEM show that the prepared films have good crystallization behavior and perovskite structure. The crystallite is about 60nm. The deposition speed is 3nm/min. This deposition method can exactly control stoichiometry ratios, doping concentration ratio and thickness of PLT thin films. The best annealing process is to bake at 300℃ for 10min and anneal at 600℃ for 1h.  相似文献   

18.
利用磁控溅射法在玻璃基片上制备Zn095Ca005O薄膜,用X射线衍射(XRD)研究薄膜的结构特性,用LS920荧光光谱仪测量了样品薄膜的PL谱,探讨了衬底温度对薄膜结晶质量和光学性质的影响。研究发现,衬底温度对薄膜的质量影响较小,450℃时制备的薄膜结晶质量最好;不同衬底温度对发光峰强度有影响;薄膜在可见光区显示出较高的透过性,在350-400nm范围内薄膜透过率骤然下降,在该范围内存在吸收边。  相似文献   

19.
在工作气压为1.9 Pa的氩氧气混合气氛中,改变氩氧的流量比和基片温度,采用射频反应磁控溅射法在不锈钢基片上制备了二氧化硅薄膜试样,并对薄膜的微观表面形貌和薄膜的亲水性进行表征.结果表明,在氩氧分压比为64和基片温度为90℃时制备的SiO2薄膜亲水性能最佳.  相似文献   

20.
以无机盐SnCl2·2H2O为主体原料,以Zn(CH3COO)2·2H2O2为掺杂剂,无水乙醇为溶剂,采用溶胶-凝胶(Sol-Gel)工艺制备了ZnO-SnO2薄膜;采用DTA-TG及XRD等分析手段研究了ZnO-SnO2薄膜的热分解和晶化过程,对ZnO-SnO2薄膜的结构进行了表征。研究了ZnO-SnO2薄膜的电学、气敏性能及机理。实验证明,ZnO-SnO2薄膜在常温下对H2S气体具有很好的气敏性能。  相似文献   

设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号