基于无线传感器网络的飞机地靶攻击训练系统的设计与应用

分析了空军飞机打地靶训练的报靶现状,提出一种基于无线传感器网络的可行的实现方案,阐述了多边算法及减小定位误差的方法。为解决飞机对地攻击弹着点检测主要采用人工检测报靶问题,实现报靶检测评估自动化提供了基础。     

小角度Rutherford散射模拟与研究

以单靶核Rutherford散射的计算机模拟程序为基础,编写了多靶核Rutherford散射的模拟程序。应用多靶核模拟程序直观地研究了多次散射、靶核遮掩、电子屏蔽等影响Rutherford散射公式适用性的因素,更好地理解和分析了小角度Rutherford散射的物理图像,并通过对不同因素的对比分析,找出了影响小角度Rutherford散射的主要因素。     

某型号中心仪改进及在生产中的批量应用

将某产品中瞄准镜定位、夹紧原理巧妙应用于中心仪上,使其与产品的结构特征相一致,消除了由标准筒、校靶仪镜筒、校靶仪筒身、校靶镜产生的累计误差,减少了装配、校对工作量,提高了工效。     

激光靶测速相对误差影响因素研究

激光靶测速是速度测量的一种重要的实验方法,其测试效率高、精度高、抗干扰能力强、测速范围大、受环境因素影响小,很有工程应用前景。针对激光靶速度的实际工程应用背景,深入、系统地研究了在匀加速阶段和匀速阶段测速时影响测速相对误差的因素,得出了在这两个典型阶段测速时,激光靶的安装位置及其精度与测速相对误差的重要关系。同时,分析得到了在给定测速相对误差前提下,激光靶的最佳安装间距。上述结果对激光靶测速的相关工程应用和相关实验的设计与开发具有重要的指导意义。     

运用高通量测序研究Alport综合征多能干细胞的microRNA及其靶基因(英文)

目的:寻找来源于Alport综合征患者与正常对照者的多能干细胞差异性表达的microR NA,并对差异性表达的microR NA靶基因进行预测。创新点:本研究不同于一般的试验标本,试验标本是来源于尿肾脏管细胞诱导而成的多能干细胞。基于Alport综合征是遗传疾病,我们对一遗传家系进行了系统的分析。寻找特异性的差异性表达microR NA及其靶基因,从基因水平对Alport综合征进行研究。方法:在前期工作中,成功地从实验者与对照者的尿肾脏管细胞诱导成多能干细胞。运用高通量测序技术分析并发现实验者与对照者之间差异性表达的microR NA。对差异性表达的microR NA靶基因进行预测,并进行靶基因聚集分析,研究靶基因主要参与的生物学过程。同时进行靶基因信号传导通路的分析,研究靶基因主要参与的细胞信号传导通路。结论:在实验组与对照组之间,发现了30个具有显著差异性表达的microR NAs,包括19个上调表达与11个下调表达。差异性表达的microR NA的靶基因主要聚集在细胞膜和细胞代谢过程;靶基因主要参与嘌呤代谢通路与丝裂原活化蛋白激酶(MAPK)通路。     

加工水平对具有广义抽象关系数学问题迁移的影响

解题者对靶题与源题之间的共性意识及加工水平对解题迁移的影响已经得到了验证,其中靶题与源题之间存在着广义抽象关系.结果表明:(1)当靶题是低难度或高难度问题时,解题者对靶题与源题之间共性关系的意识及加工水平对解题迁移的影响没有显著差异;(2)当靶题是中难度问题时,解题者对靶题与源题之间共性关系的意识及加工水平对解题迁移的影响有显著差异.     

新型起倒靶控制管理系统设计的实现

在所开发的新型起倒靶控制管理系统中,运用RS-232C接口及RS232-485转换器实现了与单片机的串行通信;通过单片机控制外围电路实现竖靶、倒靶及对打靶成绩进行计算并发送给上位机等功能。该文给出了控制系统的框图、控制流程及部分关键电路设计图。     

新型起倒靶控制管理系统设计的实现

在所开发的新型起倒靶控制管理系统中,运用RS-232C接口及RS232-485转换器实现了与单片机的串行通信;通过单片机控制外围电路实现竖靶、倒靶及对打靶成绩进行计算并发送给上位机等功能。该文给出了控制系统的框图、控制流程及部分关键电路设计图。     

飞镖游戏中的数学知识

假期中,小明和小强闲得无事可做,在家里翻箱倒柜,结果找出两把飞镖.小明高兴地对小强说:"玩玩飞镖吧,好久没玩这东东了." "好吧,飞镖靶呢?" 两个又折腾了一阵,找出了以前的飞镖靶,可惜,磨损太严重了.靶上只能见到内圈的11分和外圈的4分.其他分数和线都不清楚了. 小强看了看靶,对小明说:"这能玩吗?" "管它三七二十一,将就一下吧."看来小明确实对玩飞镖有兴趣.小强把靶用双面胶贴在墙上,两人高兴地玩开了.     

飞镖游戏中的数学知识

假期中,小明和小强闲得无事可做,在家里翻箱倒柜,结果找出两把飞镖。小明高兴地对小强说:"玩玩飞镖吧,好久没玩这东东了。""好吧,飞镖靶呢?"两个又折腾了一阵,找出了以前的飞镖靶,可惜,磨损太严重了。靶上只能见到内圈的11分和外圈的4分。其他分数和线都不清楚了。     

Preparation of AIN thin films for film bulk acoustic resonator application by radio frequency sputtering

Aluminum nitride (AIN) thin films with high c-axis orientation have been prepared on a glass substrate with an A1bottom electrode by radio frequency (RF) reactive magnetron sputtering. Based on the analysis of Berg's hysteresis model, the improved sputtering system is realized without a hysteresis effect. A new control method for rapidly depositing highly c-axis oriented AIN thin films is proposed. The N2 concentration could be controlled by observing the changes in cathode voltage, to realize the optimum processing condition where the target could be fixed stably in the transition region, and both stoichiometric film composition and a high deposition rate could be obtained. Under a 500 W RF power of a target with a 6 cm diameter, a substrate temperature of 450 ℃, a target-substrate distance of 60 mm and a N2 concentration of 25%, AIN thin film with prefer-ential (002) orientation was deposited at 2.3 μm/h which is a much higher rate than previously achieved. Through X-ray diffraction (XRD) analysis, the full width at half maximum (FWHM) of AIN (002) was shown to be about 0.28°, which shows the good crystallinity and crystal orientation of AIN thin film. With other parameters held constant, any increase or decrease in N2 con-centration results in an increase in the FWHM of AIN.     

Preparation of AlN thin films for film bulk acoustic resonator application by radio frequency sputtering

Aluminum nitride （AlN） thin films with high c-axis orientation have been prepared on a glass substrate with an Al bottom electrode by radio frequency （RF） reactive magnetron sputtering. Based on the analysis of Berg＇s hysteresis model, the improved sputtering system is realized without a hysteresis effect. A new control method for rapidly depositing highly c-axis oriented AlN thin films is proposed. The N2 concentration could be controlled by observing the changes in cathode voltage, to realize the optimum processing condition where the target could be fixed stably in the transition region, and both stoichiometric film composition and a high deposition rate could be obtained. Under a 500 W RF power of a target with a 6 cm diameter, a substrate temperature of 450 ℃, a target-substrate distance of 60 mm and a N2 concentration of 25%, AlN thin film with preferential （002） orientation was deposited at 2.3 μm/h which is a much higher rate than previously achieved. Through X-ray diffraction （XRD） analysis, the full width at half maximum （FWHM） of AlN （002） was shown to be about 0.28°, which shows the good crystallinity and crystal orientation of AlN thin film. With other parameters held constant, any increase or decrease in N2 concentration results in an increase in the FWHM of AlN.     

全自动真空磁控溅射镀膜仪研制

针对目前真空专业学生教学的需要,研制了全自动真空磁控溅射镀膜仪。详细介绍了镀膜仪6大部分的设计与制作。该镀膜仪具有占地面积小、功能齐全、功能拓展性强的特点,不仅能够服务于多门课程的教学实验,节约实验资源,而且为真空专业学生和教师提供了良好的创新实验平台,可开设多项专业实验和创新实验。     

Properties of phosphorus-doped ZnO film deposited by radio-frequency magnetron sputtering

1 Introduction a Zinc Oxide (ZnO), a II-VI compound semiconductor with a wide direct band gap of about 3.4 eV [1], has been extensively studied in recent time for their possible applications in short-wavelength light-emitting devices [2], surface wave dev…     

溅射法在不同O2／Ar比例下制备HfO2薄膜

作为一种性能稳定的绝缘体,HfO2在电子、光学以及能量相关的领域中有着重要的应用。在本工作中,我们使用反应溅射方法在不同O2／Ar比例下制备了HfO2薄膜。XRD结果显示,O2／At比例并不能明显的影响样品的结构。通过Debye—Schener公式估计,样品由纳米晶粒组成。在O2／Ar比例为0．06（功率12W）时制备的样品最接近化学配比。在可见光区域,样品具有很好的透光率,T〉85％。明显的吸收发生在波长小于220nm时。通过Tauc公式可以估算出,样品的带隙在5．051到5．547eV范围内变化。     

氩氧比对射频反应磁控溅射制备TiO2薄膜亲水性能的影响

采用射频磁控溅射法制备了锐钛矿相TiO2薄膜,在基片温度、溅射功率、溅射时间以及靶材与基片间的距离等因素不变的情况下,研究不同氩氧分压比对薄膜亲水性能的影响。通过原子力显微镜(AFM)、X射线衍射光谱(XRD)表征了薄膜的微观表面形貌和晶相组成,采用静态接触角(SCA)评估薄膜的亲水性。实验结果表明不同氩氧比制备的锐钛矿相TiO2薄膜,紫外光照12 h后,接触角降到10o左右,而氩氧比小于等于5:5的接触角都低至5o左右,达到了超亲水性。氩氧分压比为4:6时,样品薄膜的光致亲水性最佳且光照后亲水性的保持较长。     

Characterization of DC magnetron sputtering deposited thin films of TiN for SBN/MgO/TiN/Si structural waveguide

INTRODUCTION Monocrystalline SBN (Strontium barium nio-bium, SrxBa1?xNb2O6, denoted SBNx?100, where 0.25≤x≤0.75) solid solution, is currently being inves-tigated as potential material for many micro-device applications, such as piezoelectric infrared detectors, piezoelectric, electro-optic modulators, and holo-graphic storage (Koch et al., 1998), because SBN has one of the largest known linear electro-optic coeffi-cients (r33=1300 pm/V for SBN75), two orders of magnitude larger th…     

离子溅射能量损失及射程的模拟研究

运用SRIM2006软件对靶材的溅射进行了模拟,计算了各种情况下离子入射靶材能量损失和射程分布,分析其内部碰撞机理,得到了入射离子能量损失和射程分布随离子能量得变化规律:低能离子溅射能量损失以核阻止为主,高能离子溅射能量损失以电子阻止为主;载能离子的能量损失及射程与入射离子和靶原子有关;对于低能离子溅射靶材,入射离子主要分布在靶材表面几层原子内.     

Fabrication and characterization of VO2 thin films by direct current facing targets magnetron sputtering and low temperature oxidation

Low valence vanadium oxide（VO2-x） thin films were prepared on SiO2/Si substrates at room temperature by direct current facing targets reactive magnetron sputtering, and then processed through rapid thermal annealing. The effects of the annealing on the structure and phase transition property of VO2 were discussed. X-ray photoelectron spectroscopy, X-ray diffraction technique and Fourier transform infrared spectroscopy were employed to study the phase composition and structure of the thin films. The resistance-temperature property was measured. The results show that VO2 thin film is obtained after annealed at 320℃ for 3 h, its phase transition temperature is 56 ℃, and the resistance changes by more than 2 orders. The vanadium oxide thin films are applicable in thermochromic smart windows, and the deposition and annealing process is compatible with micro electromechanical system process.     

高介电HfOxNy薄膜的表面形貌及光学特性研究

采用射频反应磁控溅射氧化铪钯的方法,在硅衬底成功制备了高介电HfOxNy薄膜．利用原子力显微镜,研究氮的掺入对薄膜表面形貌的影响,结果表明,N的掺杂改善了HfO2薄膜的表面形貌,同时抑制了高温退火过程中表面粗糙度的增加;通过椭圆偏振仪对薄膜的光学特性的研究表明,随退火温度的升高,薄膜的折射率和消光系数都呈上升趋势．