Relationships between changes of kernel nutritive components and seed vigor during development stages of F_1 seeds of sh_2 sweet corn

The changes of kernel nutritive components and seed vigor in F1 seeds of sh2 sweet corn during seed development stage were investigated and the relationships between them were analyzed by time series regression (TSR) analysis. The results show that total soluble sugar and reducing sugar contents gradually declined, while starch and soluble protein contents increased throughout the seed development stages. Germination percentage, energy of germination, germination index and vigor index gradually increased along with seed development and reached the highest levels at 38 d aider pollination (DAP). The TSR showed that, during 14 to 42 DAP, total soluble sugar content was independent of the vigor parameters determined in present experiment, while the reducing sugar content had a significant effect on seed vigor. TSR equations between seed reducing sugar and seed vigor were also developed. There were negative correlations between the seed reducing sugar content and the germination percentage, energy of germination, germination index and vigor index, respectively. It is suggested that the seed germination, energy of germination, germination index and vigor index could be predicted by the content of reducing sugar in sweet corn seeds during seed development stages.     

Effects of HfO2 buffer layers on the dielectric property and leakage current of Ba0.6Sr0.4TiO3 thin films by pulsed laser deposition

Ba0.6Sr0.4TiO3 （BST） thin films with and without HfO 2 buffer layer were fabricated on Pt/Ti/SiO2/Si substrates by pulsed laser deposition. Dependences of HfO 2 thickness on the dielectric property and leakage current of BST thin films were focused. The dielectric constant of BST thin films increased and then decreased with the increase of HfO 2 thickness, while the dielectric relaxation was gradually improved. The loss tangent and leakage current under positive bias decreased with the HfO 2 thickness increasing. The leakage current analysis based on the Schottky emission indicated an improvement of the BST/Pt interface with HfO 2 buffer layer. The loss tangent, tunability and figure of merit of optimized HfO 2 buffered BST thin film achieved 0.009 8, 21.91% （E max = 200 kV/cm）, 22.40 at 10 6 Hz, respectively.