恒电流法制备ZnO薄膜及其光学性能研究

本文开发了一个新的综合实验,采用恒电流法制备了ZnO薄膜,利用X射线衍射分析了ZnO薄膜的晶粒尺寸等结构特征,紫外—可见光区的透过率分析ZnO薄膜的光学带隙,研究了Zn(NO3)2反应物浓度对ZnO薄膜的影响,探讨了将其用于学生实验的可行性。     

常压MOCVD法制备TiO_2薄膜及性质研究

利用常压MOCVD法在Si及Al2O3衬底上制备了TiO2薄膜.研究了沉积温度和退火温度对TiO2薄膜结构和形貌的影响,以及TiO2薄膜的光学性质.研究发现,沉积温度为600℃时,制备的TiO2薄膜结构为锐钛矿相,薄膜质量较高.TiO2薄膜在1 090℃高温退火后,薄膜结构完全转变为金红相.TiO2薄膜在可见区域有着高达90%以上透射率,在紫外区域有着强烈的吸收.     

溶胶-凝胶法制备多孔TiO2薄膜的研究

采用溶胶一凝胶法在玻璃基片上制备了TiO：多孔薄膜,主要研究了pH值、模板剂以及乙醇添加量对溶胶和多孔膜性能的影响．研究结果表明：溶胶一凝胶制备过程中,pH一3时和以聚乙二醇～1000为模板剂可得到稳定的溶胶,且n（PEO-1000）／n（Ti）为0．050时所得到的溶胶颗粒最小,团聚最轻,由其可制备出结构均一性好、无开裂的多孔膜;n（CH3CH2OH）／n（Ti）为24：1时,溶胶可在玻璃基体上形成完整的膜,烧结过程中随着聚乙二醇分解的CO2和H2O的逸出形成了许多微孔,得到完整的有序多孔TiO2薄膜。     

溶胶-凝胶法制备SiO2/TiO2多层膜工艺研究

采用溶胶-凝胶工艺，使用旋涂方法在单晶硅片、石英玻璃和K9玻璃上制备SiO2／TiO2系列多层膜。采用椭偏仪、透射电镜等对所制得的多层膜的性能进行了研究。结果表明实验条件对SiO2／TiO2多层膜的制备非常重要。通过对实验条件的改善与优化，可以镀制出性能优良的SiO2／TiO2多层膜，以用于微型谐振腔、滤光片、一维光子晶体和传统的光学高反膜的研究。     

载玻片为基底制备钛薄膜的研究

采用磁控溅射法,以普通载玻片为基底,制备了不同厚度的金属钛薄膜,在添加光栅掩模版后,制备了钛薄膜光栅。采用控制变量法,重点研究了不同溅射时间(10 min、15 min、20 min、30 min、40 min、50 min)对金属钛薄膜厚度、透过率、电阻率的影响,并测量了所制备的钛薄膜光栅的光栅常数。结果表明,增加溅射时间,在载玻片表面制备的金属钛薄膜的厚度也呈现出增加的趋势。但金属钛薄膜的透过率和电阻率却呈现现相反的趋势,即随着溅射时间的增加而减小;采用分光光度计测量薄膜光栅的光栅常数为0.168 mm.     

重力沉降法制备SiO_2光子晶体及其光学性质

采用重力沉降法在载玻片上制备了三维SiO2光子晶体,用扫描电子显微镜和紫外-可见分光光度计分别表征了样品的微结构和光学特性。结果表明：SiO2微球在三维方向上均为密堆积排列,由于（111）平面的布拉格反射,样品在[111]方向显示出光子带隙。随着SiO2球粒径的增大,光子带隙的中心波长位置发生红移,而且光子带隙的性质与沉积温度密切相关。     

Ar/O_2比和基片温度对射频反应磁控溅射法制备钢基SiO_2薄膜亲水性的影响

在工作气压为1.9 Pa的氩氧气混合气氛中,改变氩氧的流量比和基片温度,采用射频反应磁控溅射法在不锈钢基片上制备了二氧化硅薄膜试样,并对薄膜的微观表面形貌和薄膜的亲水性进行表征.结果表明,在氩氧分压比为64和基片温度为90℃时制备的SiO2薄膜亲水性能最佳.     

射频磁控溅射法制备纳米TiO2薄膜的拉曼光谱分析

采用射频磁控溅射法制备纳米TiO2薄膜，并应用显微拉曼光谱和电子显微镜对薄膜进行微区光分析．通过拉曼光谱研究，一方面有力地揭示出TiO2薄膜的晶体结构，另一方面对薄膜的生长方式提供了线索．薄膜聚集点和平常点上有统一的相结构，电子显微镜观察结果显示薄膜致密均匀．     

反应磁控溅射Cu2 O薄膜的结构和电学性质

用X射线衍射仪检测薄膜的结构;用分光光度计测量薄膜的透射率和反射率,采用拟合正入射透射谱数据的方法计算薄膜的厚度;用Van der Pauw方法测量薄膜表面电阻和霍尔迁移率,并计算出电阻率和载流子浓度.结果表明,生成单相Cu2O薄膜的氧气流量范围很小,在氧气流量为5-7sccm范围,薄膜主要成分为Cu2O,其中氧氩流量比为6∶25时,生成单相多晶结构的Cu2O薄膜,其表面电阻0.68MΩ/□,电阻率58.29Ω.cm,霍尔迁移率4.73cm2·V-1·s-1,载流子浓度3×1016cm-3.     

Fabrication and characterization of VO2 thin films by direct current facing targets magnetron sputtering and low temperature oxidation

Low valence vanadium oxide（VO2-x） thin films were prepared on SiO2/Si substrates at room temperature by direct current facing targets reactive magnetron sputtering, and then processed through rapid thermal annealing. The effects of the annealing on the structure and phase transition property of VO2 were discussed. X-ray photoelectron spectroscopy, X-ray diffraction technique and Fourier transform infrared spectroscopy were employed to study the phase composition and structure of the thin films. The resistance-temperature property was measured. The results show that VO2 thin film is obtained after annealed at 320℃ for 3 h, its phase transition temperature is 56 ℃, and the resistance changes by more than 2 orders. The vanadium oxide thin films are applicable in thermochromic smart windows, and the deposition and annealing process is compatible with micro electromechanical system process.     

Characterization of DC magnetron sputtering deposited thin films of TiN for SBN/MgO/TiN/Si structural waveguide

INTRODUCTION Monocrystalline SBN (Strontium barium nio-bium, SrxBa1?xNb2O6, denoted SBNx?100, where 0.25≤x≤0.75) solid solution, is currently being inves-tigated as potential material for many micro-device applications, such as piezoelectric infrared detectors, piezoelectric, electro-optic modulators, and holo-graphic storage (Koch et al., 1998), because SBN has one of the largest known linear electro-optic coeffi-cients (r33=1300 pm/V for SBN75), two orders of magnitude larger th…     

Preparation of AlN thin films for film bulk acoustic resonator application by radio frequency sputtering

Aluminum nitride （AlN） thin films with high c-axis orientation have been prepared on a glass substrate with an Al bottom electrode by radio frequency （RF） reactive magnetron sputtering. Based on the analysis of Berg＇s hysteresis model, the improved sputtering system is realized without a hysteresis effect. A new control method for rapidly depositing highly c-axis oriented AlN thin films is proposed. The N2 concentration could be controlled by observing the changes in cathode voltage, to realize the optimum processing condition where the target could be fixed stably in the transition region, and both stoichiometric film composition and a high deposition rate could be obtained. Under a 500 W RF power of a target with a 6 cm diameter, a substrate temperature of 450 ℃, a target-substrate distance of 60 mm and a N2 concentration of 25%, AlN thin film with preferential （002） orientation was deposited at 2.3 μm/h which is a much higher rate than previously achieved. Through X-ray diffraction （XRD） analysis, the full width at half maximum （FWHM） of AlN （002） was shown to be about 0.28°, which shows the good crystallinity and crystal orientation of AlN thin film. With other parameters held constant, any increase or decrease in N2 concentration results in an increase in the FWHM of AlN.     

Preparation of AIN thin films for film bulk acoustic resonator application by radio frequency sputtering

Aluminum nitride (AIN) thin films with high c-axis orientation have been prepared on a glass substrate with an A1bottom electrode by radio frequency (RF) reactive magnetron sputtering. Based on the analysis of Berg's hysteresis model, the improved sputtering system is realized without a hysteresis effect. A new control method for rapidly depositing highly c-axis oriented AIN thin films is proposed. The N2 concentration could be controlled by observing the changes in cathode voltage, to realize the optimum processing condition where the target could be fixed stably in the transition region, and both stoichiometric film composition and a high deposition rate could be obtained. Under a 500 W RF power of a target with a 6 cm diameter, a substrate temperature of 450 ℃, a target-substrate distance of 60 mm and a N2 concentration of 25%, AIN thin film with prefer-ential (002) orientation was deposited at 2.3 μm/h which is a much higher rate than previously achieved. Through X-ray diffraction (XRD) analysis, the full width at half maximum (FWHM) of AIN (002) was shown to be about 0.28°, which shows the good crystallinity and crystal orientation of AIN thin film. With other parameters held constant, any increase or decrease in N2 con-centration results in an increase in the FWHM of AIN.     

氩氧比对射频反应磁控溅射制备TiO2薄膜亲水性能的影响

采用射频磁控溅射法制备了锐钛矿相TiO2薄膜,在基片温度、溅射功率、溅射时间以及靶材与基片间的距离等因素不变的情况下,研究不同氩氧分压比对薄膜亲水性能的影响。通过原子力显微镜(AFM)、X射线衍射光谱(XRD)表征了薄膜的微观表面形貌和晶相组成,采用静态接触角(SCA)评估薄膜的亲水性。实验结果表明不同氩氧比制备的锐钛矿相TiO2薄膜,紫外光照12 h后,接触角降到10o左右,而氩氧比小于等于5:5的接触角都低至5o左右,达到了超亲水性。氩氧分压比为4:6时,样品薄膜的光致亲水性最佳且光照后亲水性的保持较长。     

低损耗TiO_2/Ormosil平面波导的制备及表征(英文)

1IntroductionPlanar waveguides have recently received much at-tention dueto their promising applications inintegratedoptics[1-5].Formation of a waveguide requires a guid-inglayer with the refractive index higher than that ofthe substrate and cladding. The number of guidingmodes depends on thickness and refractive index ofthe guiding layer . Low optical loss is an i mportantproperty of waveguide . Although pure inorganic fil msusing the sol-gel technique have both good mechanicaland thermal st…     

低损耗TiO2/Ormosil平面波导的制备及表征

TiO2/ ormosil planar waveguide was prepared by sol-gel method at low thermal treatment temperature （ 〈 200 ℃）. Scanning electron microscope, FT-IR spectrometer, spectrophotometer, atomic force microscopy, thermal analyzer, and dark m-line spectroscopy were used with the method of scattering-detection to investigate optical and structural properties. High optical quality waveguide film was obtained. The propagation loss of film was 0.569 dB/cm at a wavelength of 632.8 nm.     

柠檬酸法制备S2O82-/Fe2O3-TiO2及其光催化活性的研究

首次用柠檬酸法制备了Fe2O3-TiO2复合氧化物,经浸渍(NH4)2S2O8后,焙烧制得S2O82-/Fe2O3-TiO2固体酸催化剂,测定其时水溶性染料的光催化降解活性.结果表明在相同反应条件下,S2O82-/Fe2O3-TiO2光催化活性比Fe2O3-TiO2明显提高.当(NH4)2S2O8浸渍浓度为1mol·L-1时,制得的S2O82-/Fe2O3-TiO2酸性最强,具有超强酸性和很高的光催化活性.     

Effects of HfO2 buffer layers on the dielectric property and leakage current of Ba0.6Sr0.4TiO3 thin films by pulsed laser deposition

Ba0.6Sr0.4TiO3 （BST） thin films with and without HfO 2 buffer layer were fabricated on Pt/Ti/SiO2/Si substrates by pulsed laser deposition. Dependences of HfO 2 thickness on the dielectric property and leakage current of BST thin films were focused. The dielectric constant of BST thin films increased and then decreased with the increase of HfO 2 thickness, while the dielectric relaxation was gradually improved. The loss tangent and leakage current under positive bias decreased with the HfO 2 thickness increasing. The leakage current analysis based on the Schottky emission indicated an improvement of the BST/Pt interface with HfO 2 buffer layer. The loss tangent, tunability and figure of merit of optimized HfO 2 buffered BST thin film achieved 0.009 8, 21.91% （E max = 200 kV/cm）, 22.40 at 10 6 Hz, respectively.