氩氧比对射频反应磁控溅射制备TiO2薄膜亲水性能的影响

采用射频磁控溅射法制备了锐钛矿相TiO2薄膜,在基片温度、溅射功率、溅射时间以及靶材与基片间的距离等因素不变的情况下,研究不同氩氧分压比对薄膜亲水性能的影响。通过原子力显微镜(AFM)、X射线衍射光谱(XRD)表征了薄膜的微观表面形貌和晶相组成,采用静态接触角(SCA)评估薄膜的亲水性。实验结果表明不同氩氧比制备的锐钛矿相TiO2薄膜,紫外光照12 h后,接触角降到10o左右,而氩氧比小于等于5:5的接触角都低至5o左右,达到了超亲水性。氩氧分压比为4:6时,样品薄膜的光致亲水性最佳且光照后亲水性的保持较长。     

常压MOCVD法制备TiO_2薄膜及性质研究

利用常压MOCVD法在Si及Al2O3衬底上制备了TiO2薄膜.研究了沉积温度和退火温度对TiO2薄膜结构和形貌的影响,以及TiO2薄膜的光学性质.研究发现,沉积温度为600℃时,制备的TiO2薄膜结构为锐钛矿相,薄膜质量较高.TiO2薄膜在1 090℃高温退火后,薄膜结构完全转变为金红相.TiO2薄膜在可见区域有着高达90%以上透射率,在紫外区域有着强烈的吸收.     

TbCo磁化膜制备工艺对其垂直磁各向异性的影响

利用磁控溅射法在玻璃基片制备TbCo非晶垂直磁化膜,采用样品振动磁强计和磁转矩测量仪测量薄膜的磁性能和磁转矩曲线．结果表明：Cr底层、TbCo磁性层组分、溅射气压、基片偏压、退火温度和TbCo磁性层厚度对薄膜的磁各向异性能都有很大影响．．     

衬底温度对Zn0.95Ca0.05O薄膜结构和光学性质的影响

利用磁控溅射法在玻璃基片上制备Zn0.95Ca0.05O薄膜,用X射线衍射(XRD)研究薄膜的结构特性,用LS920荧光光谱仪测量了样品薄膜的PL谱,探讨了衬底温度对薄膜结晶质量和光学性质的影响。研究发现,衬底温度对薄膜的质量影响较小,450℃时制备的薄膜结晶质量最好;不同衬底温度对发光峰强度有影响;薄膜在可见光区显示出较高的透过性,在350-400 nm范围内薄膜透过率骤然下降,在该范围内存在吸收边。     

衬底温度对Zn095Ca005O薄膜结构和光学性质的影响

利用磁控溅射法在玻璃基片上制备Zn095Ca005O薄膜,用X射线衍射（XRD）研究薄膜的结构特性,用LS920荧光光谱仪测量了样品薄膜的PL谱,探讨了衬底温度对薄膜结晶质量和光学性质的影响。研究发现,衬底温度对薄膜的质量影响较小,450℃时制备的薄膜结晶质量最好;不同衬底温度对发光峰强度有影响;薄膜在可见光区显示出较高的透过性,在350－400nm范围内薄膜透过率骤然下降,在该范围内存在吸收边。     

Hf_(0.5)Zr_(0.5)O_2铁电薄膜的制备和性能研究

运用脉冲激光沉积方法,在Pt(111)基片上沉积制备Hf0.5Zr0.5O2铁电薄膜。通过对X射线衍射(XRD)分析表明,薄膜的正交相随衬底温度升高而增强,随薄膜厚度增加而减小。P-E电滞回线实验表明,提高衬底温度有助于增强薄膜铁电性能。400℃氧气中原位退火后薄膜剩余极化(2Pr)达到8μC/cm2。5V以下薄膜漏电流密度为3.2×10-6A/cm2。Hf0.5Zr0.5O2薄膜的疲劳特性测试表明,在经过2×109次反转后可参与翻转总极化值有一定下降。     

TiO2/CeO2/SnO2薄膜光催化超亲水性能的研究

以普通玻璃片作为基片，首次用溶胶-凝胶浸渍-提拉法制得TiO2／CeO2／SnO2薄膜，该薄膜厚度均匀，且在室温下具有良好的光致超亲水性。主要研究了薄膜厚度、热处理温度对复合薄膜亲水性能的影响，并利用XRD、DTA-TG进行了表征。     

Co-Pi和Cu2O共修饰TiO2薄膜及其光电化学性质研究

用阳极氧化法在Ti基片上制备出TiO2薄膜,然后通过电化学沉积法将Co-Pi和Cu2O沉积在TiO2薄膜表面.通过扫描电镜、X-射线衍射和光电化学性质测试,发现TiO2薄膜表面先沉积Co-Pi能够有效阻止Cu2O颗粒堆积,光电流显著提高.而先沉积Cu2O后沉积Co-Pi,则会使Cu2O还原为Cu,同时形貌发生改变.特别地,沉积300秒Co-Pi后再沉积Cu2O颗粒,能得到200 mA/cm2的最大光电流.     

玻璃基片上钽薄膜屈曲结构的边界效应研究

利用直流磁控溅射方法在玻璃基片上沉积了金属钽薄膜,研究了边界效应对薄膜屈曲结构的影响.结果表明:制备态的钽薄膜包含较大的残余压应力,促使薄膜与基片脱层而形成屈曲结构;屈曲结构在薄膜边界处成核生长,并逐渐扩展到薄膜内部区域;在薄膜边界处,屈曲结构呈垂直边界的平行直线状条纹结构,随着距离的增加,屈曲结构逐渐分叉形成无规网格结构或电话线结构.利用薄膜的单轴应力和等双轴应力模型,对屈曲结构边界处的形貌特征进行了深入分析.     

[Cu/CoPt]n/Ag薄膜的结构和磁性

采用磁控溅射方法在玻璃基片上制备了[Cu/CoPt]n/Ag薄膜,并在600℃退火30min.结果表明,Cu掺杂厚度(x)对CoPt薄膜的结构和磁性影响很大.当Cu层厚度为0.4nm时,最有利于CoPt薄膜垂直取向生长,其垂直矫顽力达9.2kOe,而平行矫顽力为4.7kOe.     

Preparation and Characterization of Nano-Particles PZT Ferroelectric Thin Films by RF-Magnetron Sputtering

Pt/Ti bottom electrodes were fabricated on SiO2/Si substrates by magnetron dual-facing-target sputtering system. Lead zirconate titanate(PZT) thin films were deposited on Pt/Ti/ SiO2/Si substrates by radio frequency (RF) magnetron sputtering system. The thickness of PZT thin films which were deposited for 5 h was about 800 nm. XRD spectra show that PZT thin films deposited in Ar ambience and rapid-thermal-annealed for 20 min at 700 ℃ have good crystallization behavior and perovskite structure. AFM micrographs show that mean diameter of crystallites is 70 nm and surface structures of PZT thin films are uniform and dense. Raw mean, root mean square roughness and mean roughness of PZT thin films are 34.357 nm, 2.479 nm and 1.954 nm respectively. As test frequency is 1 kHz, dielectric constant of PZT thin films is 327.6. Electric hysteresis loop shows that coercive field strength, residual polarization strength and spontaneous polarization strength of PZT thin films are 50 kV/cm, 10 μC/cm2 and 13 μC/cm2 respectively.     

铝掺杂氧化锌薄膜的制备及其特性

采用直流反应磁控溅射法,制备了铝掺杂的氧化锌薄膜.结果显示：薄膜在500℃退火后透光率高,光敏特性良好,并且有明显的紫外光响应.其XRD衍射谱表明随着O2与Ar流量比的增加,对应于（002）晶面的衍射峰趋于尖锐,c轴取向突出明显.     

双层透明薄膜制备及氧含量对折射率影响研究

利用磁控溅射技术在玻璃基片上分别沉积ZnOx薄膜、TiO2-y薄膜和TiO2-y/ZnOx双层透明薄膜,改变薄膜沉积过程中的氩气(Ar)和氧气((O2)的比例,获得具有不同氧含量的ZnOx薄膜和TiO2-y薄膜.采用椭偏仪测定所有样品的折射率,仔细研究薄膜中氧含量对折射率的影响.分别选择具有较大的折射率TiO2-y薄膜和具有较小的折射率ZnOx薄膜的生长条件,制备TiO2-y/ZnOx双层薄膜,获得光密媒质/光疏媒质双层结构,并观察到He-Ne激光从ZnOx薄膜入射到TiO2-y/ZnOx界面上发生的全反射现象.研究成果适用于大学生物理实验中的研究型实验或大学创新实验.     

退火温度对SiO_2薄膜微结构和光学特性的影响

采用射频磁控溅射技术用单晶Si(111)和载玻片制备了SiO2薄膜。对薄膜进行了不同温度的退火处理。利用X射线衍射仪,紫外-可见分光光度计和傅里叶变换红外光谱仪等测试不同退火温度下SiO2薄膜的微结构、透反射曲线和红外吸收谱。研究表明:退火后SiO2薄膜仍为四方结构,薄膜的平均晶粒尺寸随退火温度的升高逐渐增大,晶格常数与标准值相比均稍小。退火温度对薄膜平均反射率影响不明显;薄膜平均透射率随退火温度的升高先增大后减小。     

Mn掺杂对铁酸铋薄膜漏电流和铁电性能的影响

采用溶胶凝胶的化学溶液沉积法在Pt/Ti/SiO2/Si衬底上制备了不同浓度(0,0.05,0.1 at.%)的Mn掺杂铁酸铋薄膜.薄膜晶体结构的X射线衍射结果显示不同浓度掺杂的薄膜平均晶粒尺寸相差并不大,而薄膜的漏电流分析则表明5%Mn掺杂的铁酸铋薄膜比未掺杂和10%Mn掺杂的薄膜漏电流要小.此外,通过薄膜的铁电性能测试发现5%Mn掺杂的铁酸铋薄膜比未掺杂和10%Mn掺杂的薄膜的铁电性能也要好.根据缺陷化学理论,由氧空位的电荷补偿引起的Fe离子和Mn离子价态变化是产生这一结果的主要原因.     

Preparation of Nano-Particles （ Pb, La）TiO3 Thin Films by Liquid Source Misted Chemical Deposition

Nano-particles lanthanum-modified lead titanate (PLT) thin films are grown on Pt/Ti/SiO2/Si substrate by liquid source misted chemical deposition (LSMCD). PLT films are deposited for 4-8 times, and thenannealed at various temperature. XRD and SEM show that the prepared films have good crystallization behavior and perovskite structure. The crystallite is about 60nm. The deposition speed is 3nm/min. This deposition method can exactly control stoichiometry ratios, doping concentration ratio and thickness of PLT thin films. The best annealing process is to bake at 300℃ for 10min and anneal at 600℃ for 1h.     

Fabrication and characterization of VO2 thin films by direct current facing targets magnetron sputtering and low temperature oxidation

Low valence vanadium oxide（VO2-x） thin films were prepared on SiO2/Si substrates at room temperature by direct current facing targets reactive magnetron sputtering, and then processed through rapid thermal annealing. The effects of the annealing on the structure and phase transition property of VO2 were discussed. X-ray photoelectron spectroscopy, X-ray diffraction technique and Fourier transform infrared spectroscopy were employed to study the phase composition and structure of the thin films. The resistance-temperature property was measured. The results show that VO2 thin film is obtained after annealed at 320℃ for 3 h, its phase transition temperature is 56 ℃, and the resistance changes by more than 2 orders. The vanadium oxide thin films are applicable in thermochromic smart windows, and the deposition and annealing process is compatible with micro electromechanical system process.     

常温H2S气敏薄膜的溶胶—凝胶制备及性能研究

以无机盐SnCl2·2H2O为主体原料,以Zn(CH3COO)2·2H2O2为掺杂剂,无水乙醇为溶剂,采用溶胶-凝胶（Sol-Gel)工艺制备了ZnO-SnO2薄膜;采用DTA-TG及XRD等分析手段研究了ZnO-SnO2薄膜的热分解和晶化过程,对ZnO-SnO2薄膜的结构进行了表征。研究了ZnO-SnO2薄膜的电学、气敏性能及机理。实验证明,ZnO-SnO2薄膜在常温下对H2S气体具有很好的气敏性能。     

溅射法在不同O2／Ar比例下制备HfO2薄膜

作为一种性能稳定的绝缘体,HfO2在电子、光学以及能量相关的领域中有着重要的应用。在本工作中,我们使用反应溅射方法在不同O2／Ar比例下制备了HfO2薄膜。XRD结果显示,O2／At比例并不能明显的影响样品的结构。通过Debye—Schener公式估计,样品由纳米晶粒组成。在O2／Ar比例为0．06（功率12W）时制备的样品最接近化学配比。在可见光区域,样品具有很好的透光率,T〉85％。明显的吸收发生在波长小于220nm时。通过Tauc公式可以估算出,样品的带隙在5．051到5．547eV范围内变化。     

Characterization of DC magnetron sputtering deposited thin films of TiN for SBN/MgO/TiN/Si structural waveguide

INTRODUCTION Monocrystalline SBN (Strontium barium nio-bium, SrxBa1?xNb2O6, denoted SBNx?100, where 0.25≤x≤0.75) solid solution, is currently being inves-tigated as potential material for many micro-device applications, such as piezoelectric infrared detectors, piezoelectric, electro-optic modulators, and holo-graphic storage (Koch et al., 1998), because SBN has one of the largest known linear electro-optic coeffi-cients (r33=1300 pm/V for SBN75), two orders of magnitude larger th…