Ta掺杂SnO2薄膜的散射机制

通过射频磁控溅射的方法制备了Ta掺杂SnO2薄膜,研究了薄膜的结构和低温下电阻率随磁场的变化规律.测量表明低温下呈现出负的磁电阻,但是,二维、三维弱局域理论均不能解释样品中出现的负的磁电阻现象.综合考虑了三阶微绕近似的s-d交换哈密顿的半经验公式Δρ/ρ=-B12ln(1+B22H2))和双能带模型的相关公式Δρ/ρ=B32H/(1+B42H2)拟合了样品在5 T以下的磁电阻的数据,理论和实验符合得很好.结果表明Ta掺杂SnO2薄膜中的磁电阻源于局域磁矩的传导电子散射.     

Microstructure and corrosion resistance of sputtered TiN coatings on surface of Zr-4 alloy

To improve the oxidation resistance and corrosion resistance of Zr-4 alloy, titanium nitride(TiN) coatings were prepared on the Zr-4 alloy with a TiN ceramic target with different ratios of N_2. Microstructure and high-temperature properties of the TiN coated samples were studied by scanning electron microscopy(SEM), energy dispersive spectrometer(EDS), X-ray diffraction meter(XRD), X-ray photoelectron spectroscopy(XPS), heat treatment furnace and autoclaves, respectively. The x value of the TiN coatings(TiN_x) ranges from 0.96 to 1.33. After the introduction of N_2, TiN coating exhibits a weak(200) plane and a preferred(111) orientation. The coating prepared with an N_2 flow ratio of 15% shows an optimal oxidation resistance in the atmospheric environment at 800 °C. In either 1 200 °C steam environment for one hour, or deionized water at 360 °C and a pressure of 18.6 Mpa for 16 d, the opitimized TiN coated samples have no delamination or spallation; and the gains in the masses of samples are much smaller than Zr-4 alloy. These results demonstrate the effectiveness of the optimized TiN coating as the protective coating on the Zr-4 alloy under extreme conditons.     

Cu在CoN和CoSiN薄膜中的扩散研究

利用磁控溅射的方法在n型硅基底制备了Cu／CoN／Si（100）和Cu／CoSiN／Si（100）薄膜,并对它们进行了不同温度的退火．用原子力显微镜观察了它们的表面形貌．用扫描透射电镜能谱分析法得到了在不同退火温度下铜在上面两种薄膜中浓度与表面距离的分布,然后利用菲克第二定律对Cu／CoN／Si和Cu／CoSiN／Si体系中cu的扩散进行了计算和分析,得出中温条件（300℃-700℃）下Cu在CoN和CoSiN两种薄膜中的扩散系数表达式分别为8．98×10^-13exp（-0．45eV／kT）cHf／s和5．39×10^-11exp（-0．49eV／kT）Cm2／s．     

Experimental performance of moderate and high temperature heat pump charged with refrigerant mixture BY-3

Theoretical and experimental analysis of a new refrigerant mixture BY-3 was conducted based on a single-stage vapor compression refrigeration system. The water-water heat pump system used BY-3 to produce hot water when the low temperature was 20 ℃. The following results were obtained: the highest temperature at the condenser outlet reached about 85 ℃; when the difference between the water temperatures at the condenser outlet and the evaporator inlet was less than 40 ℃, the coefficient of performance (COP) was larger than 4; when the difference reached 55 ℃, the COP still kept 3; the discharge temperature of BY-3 was lower than 100 ℃, and the refrigerant vapor pressure kept lower than 1.8 MPa. When the water temperature at the condenser outlet reached over 85 ℃, nearly a 5 ℃ superheating temperature was maintained.     

Fabrication and characterization of VO2 thin films by direct current facing targets magnetron sputtering and low temperature oxidation

Low valence vanadium oxide（VO2-x） thin films were prepared on SiO2/Si substrates at room temperature by direct current facing targets reactive magnetron sputtering, and then processed through rapid thermal annealing. The effects of the annealing on the structure and phase transition property of VO2 were discussed. X-ray photoelectron spectroscopy, X-ray diffraction technique and Fourier transform infrared spectroscopy were employed to study the phase composition and structure of the thin films. The resistance-temperature property was measured. The results show that VO2 thin film is obtained after annealed at 320℃ for 3 h, its phase transition temperature is 56 ℃, and the resistance changes by more than 2 orders. The vanadium oxide thin films are applicable in thermochromic smart windows, and the deposition and annealing process is compatible with micro electromechanical system process.     

钢桥面硬沥青浇注式沥青混合料低温性能研究

通过汉堡轮辙试验 ,考察了浇注式沥青混合料的抗车辙能力 ,硬沥青浇注式沥青混合料具有良好的抗车辙能力 .通过低温弯曲试验和逐步降温的钢桥面铺装复合结构疲劳试验 ,测试与比较了使用硬沥青的浇注式混合料低温抗裂性能 .高性能聚合物改性沥青浇注式混合料具有较长的疲劳寿命和较低的断裂温度 ,可用于钢桥面浇注式沥青铺装 .     

高教育成本与低就业起薪矛盾之对策

结合实证分析了近年来出现的高教育成本与低就业起薪的矛盾、成因及社会影响，探讨如何通过政府、高校、用人单位和大学生各自的努力应对高教育成本与低就业起薪矛盾引发的社会问题，最终实现各方共赢。     

Ar/O_2比和基片温度对射频反应磁控溅射法制备钢基SiO_2薄膜亲水性的影响

在工作气压为1.9 Pa的氩氧气混合气氛中,改变氩氧的流量比和基片温度,采用射频反应磁控溅射法在不锈钢基片上制备了二氧化硅薄膜试样,并对薄膜的微观表面形貌和薄膜的亲水性进行表征.结果表明,在氩氧分压比为64和基片温度为90℃时制备的SiO2薄膜亲水性能最佳.