类金刚石薄膜/HgCdTe晶体界面应力的有限元分析

Micro-indention and finite element method (FEM) are used to study the stress at the interface between diamond-like carbon (DLC) film and mercury cadmium telluride (MCT) substrate, with different coating thickness, deposition temperature and indention load. The FEM simulation results show that when Young＇s modulus ratio of the coating to the substrate Ec/Es相似文献   

Fracture behavior characteristic of ceramic reinforced metal-base coatings

The fracture behavior of a ceramic reinforced metal-base coating prepared by high velocity arc spraying (HVAS)technology in three-point bending test was studied.Moreover,finite element analysis(FEA)was adopted to analyze the stress distribution in the crack front.It can be found that the crack norrnal to the interface in the coatings occurred at the location where a fixed moment of force was reached.So the critical moment can be taken as thecoating cracking criterion,which was confirmed by FEA results.In addition,the stress levels at three different locations where cracks occurred near the interface are almost the same.The results will provide reference for the design of coatings and the structure integrity evaluation of coating/substrate systems.     

等离子喷涂NiCrAl/Cr2O3-8%TiO2涂层残余应力模拟分析

建立了模拟涂层残余应力的数学模型,对等离子喷涂不同厚度NiCrAl/Cr2O3-8%TiO2涂层的残余应力进行了模拟,模拟结果表明:由于涂层与基体的热膨胀系数不匹配等原因,在界面等区域存在严重的应力集中,涂层内部的残余应力水平,随涂层厚度增加而增加,涂层中的径向、轴向、切向应力均为压应力,径向应力是最主要的应力。     

Preparation of AIN thin films for film bulk acoustic resonator application by radio frequency sputtering

Aluminum nitride (AIN) thin films with high c-axis orientation have been prepared on a glass substrate with an A1bottom electrode by radio frequency (RF) reactive magnetron sputtering. Based on the analysis of Berg's hysteresis model, the improved sputtering system is realized without a hysteresis effect. A new control method for rapidly depositing highly c-axis oriented AIN thin films is proposed. The N2 concentration could be controlled by observing the changes in cathode voltage, to realize the optimum processing condition where the target could be fixed stably in the transition region, and both stoichiometric film composition and a high deposition rate could be obtained. Under a 500 W RF power of a target with a 6 cm diameter, a substrate temperature of 450 ℃, a target-substrate distance of 60 mm and a N2 concentration of 25%, AIN thin film with prefer-ential (002) orientation was deposited at 2.3 μm/h which is a much higher rate than previously achieved. Through X-ray diffraction (XRD) analysis, the full width at half maximum (FWHM) of AIN (002) was shown to be about 0.28°, which shows the good crystallinity and crystal orientation of AIN thin film. With other parameters held constant, any increase or decrease in N2 con-centration results in an increase in the FWHM of AIN.     

钼表面（Mo,W）Si2-Si3N4复合涂层的低温氧化行为研究

采用包渗法在钼表面原位制备了（Mo,W）Si2-Si3N4复合涂层,考察了其在大气中于500℃和600℃等温循环的氧化性能,利用XRD和SEM等研究了其组织形貌.结果表明：（Mo,W） Si2-Si3N4涂层具有良好的低温抗氧化性,其在空气中500℃和600℃氧化480 h的氧化速率分别为0.0145 g/（m2·h）和0.0191g/ （m2·h）,归因于涂层氧化表面形成了致密的SiO2膜.     

激光熔覆WC/Co多层过渡涂层与单层涂层的热应力有限元分析

在建立WC/Co多层过渡涂层与单层涂层模型的基础上,借助有限元分析软件对高温下涂层和基体的应力分布进行了模拟。在后处理阶段,对两种涂层结构分别选定了两条具有代表性的路径,同时提取两种结构对应路径上的应力,并进行了对比分析。结果表面,在界面和涂层厚度方向,多层过渡涂层的热应力总体上小于单层涂层的热应力,并且分布更加平缓。     

基于MEMS工艺的悬臂共面式气体传感器性能分析(英文)

为了简化制作工艺,使温度分布均匀以及降低功耗,设计了一种基于MEMS制造工艺的悬臂共面式SnO2气体传感器.使用有限元法对这种传感器及膜结构堆积于硅基底上的封闭膜式气体传感器进行了稳态热分析,结果表明悬臂共面式传感器拥有更均匀的温度分布和更低的功耗.当最高温度为383℃时功耗仅为7mW,敏感薄膜上的温差低于14℃.为解决悬臂易碎的问题,提出了一种新的制造工艺,该过程在正面刻蚀SiO2层形成悬臂结构前沉积SnO2敏感薄膜,并采用深反应离子刻蚀的方法对硅基底进行体刻以避免湿法刻蚀对传感器表面的化学污染.整个过程总共需要4块掩模板.采用旋涂法溶胶凝胶法将掺有Fe离子的SnO2薄膜沉积于基底上作为敏感元件.该器件对氢气表现出了良好的气敏性能,随着氢气浓度从50×10-6上升到2000×10-6,灵敏度逐渐提高,在2000×10-6时的灵敏度为30.     

Preparation of Nano-Particles （ Pb, La）TiO3 Thin Films by Liquid Source Misted Chemical Deposition

Nano-particles lanthanum-modified lead titanate (PLT) thin films are grown on Pt/Ti/SiO2/Si substrate by liquid source misted chemical deposition (LSMCD). PLT films are deposited for 4-8 times, and thenannealed at various temperature. XRD and SEM show that the prepared films have good crystallization behavior and perovskite structure. The crystallite is about 60nm. The deposition speed is 3nm/min. This deposition method can exactly control stoichiometry ratios, doping concentration ratio and thickness of PLT thin films. The best annealing process is to bake at 300℃ for 10min and anneal at 600℃ for 1h.     

Stress and Displacement Distribution of Soft Clay Slope with 2D and 3D Elastoplastic Finite Element Method

Based on elastoplastic model, 2D and 3D finite element method (FEM) are used to calculate the stress and displacement distribution in the soft clay slope under gravity and uniform load at the slope top. Stability analyses indicate that 3D boundary effect varies with the stress level of the slope. When the slope is stable, end effect of 3D space is not remarkable. When the stability decreases, end effect occurs; when the slope is at limit state, end effect reaches maximum. The energy causing slope failure spreads preferentially along y-z section, and when the failure resistance capability reaches the limit state, the energy can extend along x-axis direction. The 3D effect of the slope under uniform load on the top is related to the ratio of load influence width to slope height, and the effect is remarkable with the decrease of the ratio.     

Preparation of AlN thin films for film bulk acoustic resonator application by radio frequency sputtering

Aluminum nitride （AlN） thin films with high c-axis orientation have been prepared on a glass substrate with an Al bottom electrode by radio frequency （RF） reactive magnetron sputtering. Based on the analysis of Berg＇s hysteresis model, the improved sputtering system is realized without a hysteresis effect. A new control method for rapidly depositing highly c-axis oriented AlN thin films is proposed. The N2 concentration could be controlled by observing the changes in cathode voltage, to realize the optimum processing condition where the target could be fixed stably in the transition region, and both stoichiometric film composition and a high deposition rate could be obtained. Under a 500 W RF power of a target with a 6 cm diameter, a substrate temperature of 450 ℃, a target-substrate distance of 60 mm and a N2 concentration of 25%, AlN thin film with preferential （002） orientation was deposited at 2.3 μm/h which is a much higher rate than previously achieved. Through X-ray diffraction （XRD） analysis, the full width at half maximum （FWHM） of AlN （002） was shown to be about 0.28°, which shows the good crystallinity and crystal orientation of AlN thin film. With other parameters held constant, any increase or decrease in N2 concentration results in an increase in the FWHM of AlN.     

Numerical analysis of tensile bifurcation phenomenon of a film bonded to a substrate

To study the mechanical properties of the film/substrate structure, the finite element code ABAQUS v6.9-1 is adopted to simulate the tensile mechanical behavior of the nanoscale thin film bonded to a substrate. The bifurcation phenomenon of the structure under uniaxial tension is found: the single-neck deformation, the multiple-neck deformation and the uniform deformation. The substrate and the film are regarded as power-hardening materials obeying the J 2 deformation theory. Firstly, the influence of material hardening match on tensile bifurcation mode is analyzed under perfectly well-bonded interface condition. Then, the effects of interfacial stiffness and other superficial defects surrounding the imperfection on bifurcation mode are investigated. It is concluded that under the well-bonded interface condition, if the stress of the substrate is larger than the film, the film will uniformly deform with the substrate; if the stress of the substrate is smaller than the film, the film will form a single neck, except the case that a weakly-hardening film is bonded to a steeply-hardening substrate when multiple necks can be formed. With the decrease of interfacial stiffness, the uniform deformation mode can transform into the multiple-neck deformation mode, and further transform into the single-neck deformation mode. And other defects surrounding the imperfection can influence the wavelength of deformation and neck number.     

磁控溅射TiN薄膜及其性能研究

以直流反应磁控溅射方法在Si（111）基底上制备薄膜TiN.研究发现：在保持其他工艺参数不变的条件下,溅射气压在0.3～1.3 Pa范围内,薄膜的主要成分是（111）择优取向的立方相TiN.当溅射气压为0.5 Pa时,沉积的薄膜膜层致密均匀,色泽金黄,膜厚为115.8 nm,结晶性能好.在可见光区半透明而在红外光区呈高反射,红外反射率为90%,具有良好的太阳光谱选择性.     

反应等离子熔覆高铬铁基金属陶瓷增强耐磨涂层组织与性能

利用反应等离子熔覆技术、以Fe-Cr-C-W-Ni合金粉末为原料,在Q235钢表面制得了Cr7C3高铬铁基金属陶瓷增强耐磨复合涂层。利用SEM、EDS和X射线衍射分析了涂层的显微组织,在室温干滑动磨损试验条件下测试了涂层的耐磨性。结果表明:反应等离子熔覆Cr7C3高铬铁基金属陶瓷增强耐磨复合涂层硬度高、组织均匀、与基材之间为完全冶金结合;涂层在室温干滑动磨损试验条件下表现出优异的耐磨性,涂层磨损的质量损失随载荷增加十分缓慢,涂层具有优异的载荷特性。     

Synthesis of TiO2 supported on activated carbon by MOCVD:operation parameters study

A novel metallo-organic chemical vapor deposition (MOCVD) technique has been applied to the preparation of the photocatalytic titanium dioxide supported on activated carbon. The effects of various condition parameters such as carrier gas flow rate, source temperature and deposition temperature on the deposition rate were investigated. The maximum deposition rate of 8.2 mg/(g.h) was obtained under conditions of carrier gas flow rate of 400 ml/min, source temperature of 423 K and deposition temperature of 913 K. The deposition rate followed Arrhenius behavior at temperature of 753 K to 913 K, corresponding to activation energy Ea of 51.09 kJ/mol. TiO2 existed only in anatase phase when the deposition temperature was 773 K to 973 K. With increase of deposition temperature from 1073 K to 1273 K, the rutile content sharply increased from 7% to 70%. It was found that a deposition temperature of 773 K and a higher source temperature of 448 K resulted in finely dispersed TiO2 particles, which were mainly in the range of 10-20 nm.     

Si基Ge光电探测器的研制及性能分析

以Si衬底上外延Ge薄膜为吸收区,研究了Si基Ge光电探测器的材料生长与器件制作工艺,并对材料晶体质量和器件性能进行表征分析。Ge薄膜是采用低温缓冲层技术在超高真空化学气相沉积系统上生长的。1μm厚Ge薄膜的表面仅出现纳米量级的岛,表面粗糙度只有1.5 nm。Ge薄膜的X射线衍射峰形对称,峰值半高宽低于100 arc sec。Ge薄膜中存在0.14%的张应变。Si基Ge光电探测器在-1 V偏压时暗电流密度为13.7 mA/cm2,在波长1.31μm处的响应度高达0.38 A/W,对应外量子效率为36.0%,响应波长扩展到1.6μm以上。     

脉冲激光沉积法在多孔硅衬底上制备ZnS薄膜

用电化学阳极氧化法制备了一定孔隙率的多孔硅样品,然后用脉冲激光沉积法以PS为衬底生长一层ZnS薄膜.用X射线衍射仪、扫描电子显微镜和荧光分光光度计分别表征了ZnS薄膜的结构、形貌和ZnS/PS复合膜的光致发光性质.XRD结果表明,制备的ZnS薄膜沿β-ZnS(111)方向择优生长,结晶质量良好,但衍射峰的半峰全宽较大;SEM图像显示,ZnS薄膜表面出现一些凹坑,这是衬底PS的表面粗糙所致.室温下的光致发光谱表明,沉积ZnS薄膜后,PS的发光峰蓝移.把ZnS的蓝绿光与PS的橙红光叠加,在可见光区450~700 nm形成了一个较宽的光致发光谱带,ZnS/PS复合膜呈现较强的白光发射.     

N2分压对（Ti，A1）N涂层成分、结构及力学性能的影响水

采用电弧离子镀工艺,调节N2分压制备了系列（Ti,A1）N硬质涂层,研究了不同N2分压对涂层表面形貌、相结构、成分及力争性能的影响．结果表明,当氮气分压较低时,涂层金属相含量较高,涂层硬度和残余应力较低,膜／基结合力较高,涂层耐磨性较差;当氮气分压较高时,涂层氮化物相含量较高,涂层硬度和残余应力较高,膜／基结合力偏低,涂层耐磨性很强．     

Relationship between power density distribution and homogenization of diamond film in the multifilament CVD system

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碳纤维薄板粘贴长度对混凝土应力场的影响

对碳纤维薄板增强混凝土三点弯曲缺口梁为研究对象，采用有限元方法分析了不同粘贴长度的碳纤维薄板对混凝土的切口尖端应力场及界面处的应力场的影响。结果表明，合适的粘贴长度将使切口尖端的应力集中降低，试件的极限承载力得到提高，过长的贴板对应力控制作用不明显，在混凝土底部出现新的宏观裂缝导致试件破坏。     

Morphology and Structure Analyses of SnO2 Thin Film Coated on Al2O3 Ultrafine Particles by Gas Phase Reaction in Fluidized Bed

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