硼掺杂纳米硅薄膜的热退火效应研究

采用等离子体增强化学气相沉积技术制备了硼掺杂氢化非晶硅薄膜,然后经过不同温度的热退火处理,获得硼掺杂纳米硅薄膜．结果表明,退火温度为700℃时,样品中开始有纳米晶形成,随着退火温度的增加,在1000℃时,薄膜的晶化率达到77％,晶粒大小为3．9nm．退火温度低于600℃时,光学带隙随着退火温度的升高而变窄,高于600℃...     

Ti-50．9at％Ni薄膜组织和相转变的研究

采用磁控溅射方法在Si片沉积了Ti-50．9at％Ni形状记忆合金薄膜,并将薄膜分别在不同温度下进行退火．利用示差扫描量热方法（DSC）、X射线衍射仪（XRD）、透射电镜（TEM）研究了薄膜退火前后形貌、相变特征及应力随退火温度的变化．实验结果表明：溅射态薄膜为非晶态,其晶化温度范围为430℃-535℃,晶化同时伴随着Ti3Ni4相的析出;退火后的薄膜随着退火温度的升高,Rs、Af、Ms均呈上升趋势．薄膜的残余应力随着退火温度的增加而逐渐减少．     

压力对Zr41.2Ti13.8Cu12.5Ni10Be22.5块体非晶合金晶化行为的影响

介绍了用于压力测量的新型bridgman装置，并结合X射线衍射分析技术（XRD）研究了常压、高压条件下Zr41．2Ti13．8Cu12．5Ni10Be22．5块体非晶合金的晶化。结果表明，在相同的退火条件下（400℃，退火3小时），增大压力有利于Zr41．2Ti13．8Cu12．5Ni10Be22．5块体非晶合金的晶化；压力越大获得晶化相的晶粒尺寸越大。     

激发频率对纳米晶硅薄膜晶化特性的影响

为制备高质量的纳米晶硅薄膜,采用等离子体化学气相沉积方法,以硅烷、高纯氢为源气体,氢稀释率保持在98％,衬底温度200℃,反应气压100 Pa,沉积时间60 min,在射频频率分别为13.56、54.24 MHz下合成了纳米晶硅薄膜.利用Raman光谱和X射线衍射技术分析了样品,结果表明,高激发频率可促进薄膜从非晶硅到纳米晶硅的转化,有利于提高薄膜的晶化率,且晶粒具有各种晶体取向,没有出现择优生长.当激发频率从13.56 MHz升高到54.24 MHz时,晶化率相应从9％提高到72％.     

HfOxNy薄膜的制备及其性能研究

本文采用磁控溅射法制备了HfOxNy高介电薄膜，结合XRD、XPS等手段研究了退火温度对薄膜的结构和化学键态的影响，发现N的掺入使Hf4f峰位向低能方向移动．而随着退火温度的升高，Hf4f的双峰峰位向着高结合能的方向移动，这表明N的含量随着退火温度的升高而降低．XRD结果显示N的掺人能提高薄膜的晶化温度．     

电场方向对铝诱导非晶硅薄膜固相晶化影响浅析

通过扫描电子显微镜、X射线衍射仪和喇曼谱仪检测铝诱导非晶硅薄膜的场致固相晶化的情况,分析了电场方向对铝诱导非晶硅薄膜固相晶化的影响.     

非晶Sm_xCo_(1-x)薄膜的反常霍尔效应研究

为了研究量子效应对磁性薄膜低温输运性质的影响,采用直流磁控溅射方法,通过改变Sm质量分数,制备了厚度约为100 nm的非晶Sm_xCo_(1-x)系列薄膜。输运性质测量发现,由于结构的高度无序,薄膜出现了显著的弱局域化效应。当温度低于50 K时,Sm_xCo_(1-x)薄膜的纵向电阻率和反常霍尔电阻率均随温度降低而呈对数增长。基于Mitra等人提出的颗粒模型,计算了弱局域化效应对纵向电导率和反常霍尔电导率的修正,并进一步分析了反常霍尔电导率与纵向电导率之间的依赖关系。结果表明x=5,29%和x=16,7%样品中弱局域化效应对霍尔电导的修正为零,与理论分析结果一致。     

溶胶-凝胶法制备ZnO薄膜晶体结构和发光特性的研究

采用溶胶-凝胶（Sol-Gel）旋涂法在Si（100）衬底上制备ZnO薄膜，在室温下利用X射线衍射（XRD）、原子力显微镜（AFM）、光致发光谱（PL）等手段分析所得ZnO薄膜的晶体结构和发光特性．结果表明：当热分解温度为400℃，晶化温度为450℃～650℃时，溶胶．凝胶旋涂法制备的ZnO薄膜样品属六方纤锌矿结构，ZnO薄膜呈现沿各个晶面自由生长的特性；在室温下均有较强的紫外带边发射峰，这表明带间跃迁占了主导地位，与缺陷有关的可见发射带很弱．以上结果说明：溶胶．凝胶法制备的ZnO薄膜质量较高．     

Al和Mn掺杂ZnO薄膜的结构和电学性质

采用磁控溅射方法在硅衬底上制备了纯ZnO薄膜和Al、Mn掺杂的ZnO薄膜。用X衍射和原子力显微镜分析了薄膜的晶化行为和显微结构,利用Keithley 2400高阻计分析了薄膜的电学性质。结果表明,掺入Al的ZnO薄膜有良好的晶化,有很好的表面结构,显示强烈的(002)择优取向,呈现低的电阻率,可用作太阳能电池的电极材料。     

非晶碳化硅薄膜光学特性的热退火效应

通过Raman光谱、紫外-可见透射光谱技术及原子力显微镜对非晶碳化硅薄膜结构和光学特性的热退火效应进行了研究。结果表明,碳化硅拉曼谱带随退火温度的增加而逐渐红移和尖锐化,显示了薄膜中晶化有序度的提高。退火后薄膜包含大量紧凑的纳米团簇,膜面相对于未退火样品较为粗糙。根据紫外-可见透射光谱导出的光学带隙从原始样品的1．86eV连续增加到经1050℃退火样品的2．23eV。碳化硅薄膜中纳米团簇的形成及其晶化程度的增加导致了薄膜光学带隙的蓝移效应。     

Preparation of Nano-Particles （ Pb, La）TiO3 Thin Films by Liquid Source Misted Chemical Deposition

Nano-particles lanthanum-modified lead titanate (PLT) thin films are grown on Pt/Ti/SiO2/Si substrate by liquid source misted chemical deposition (LSMCD). PLT films are deposited for 4-8 times, and thenannealed at various temperature. XRD and SEM show that the prepared films have good crystallization behavior and perovskite structure. The crystallite is about 60nm. The deposition speed is 3nm/min. This deposition method can exactly control stoichiometry ratios, doping concentration ratio and thickness of PLT thin films. The best annealing process is to bake at 300℃ for 10min and anneal at 600℃ for 1h.     

A novel fabrication of meso-porous silica film by sol-gol of TEOS

A homogeneous crack-free nano- or meso-porous silica films on silicon was fabricated by colloidal silica sol derived by hydrolyzing tetraethyl orthosilicate (TEOS) catalyzing with (C4H9)4N OH- in water medium. The solution with ratio of H2O/TEOS≥15, R4N and glycerol as templates, combining with the hydrolyzed intermediate, controlled the silica aggregating; the templated silica film with heterostructure was developed into homogeneous nano-porous then meso-porous silica films after being annealed from 750 ℃ to 850 ℃; the formation mechanism of the porous silica films was discussed; morphologies of the silica films were characterized. The refractive indexes of the porous silica films were 1.256-1.458, the thermal conductivity < 0.7 W/m/K. The fabricating procedure and the sequence had not been reported before.     

A novel fabrication of meso-porous silica film by sol-gol of TEOS

INDRODUCTIONMeso-poroussilicafilmswithanexcellentheat-insulatingpropertyandtherelativelylowdielectricvalueplayparticularlyimportantroleinelectronicandmagneticdevices(Moonetal.,1997),etc.;thosewithporesizesof5nmto50nmarealsoofinterestforapplicationsinphotonics,optoelec-tronics,lightweightstructuralmaterialthermalin-sulation,opticalcoating(Moonetal.,1997;HusingandSchulert,1998;Davis,2002).Theirspecialnetworkstructureisusedinsounddetector(HusingandSchubert,1998);theirexcellentinsulatingpro…     

衬底温度对Zn095Ca005O薄膜结构和光学性质的影响

利用磁控溅射法在玻璃基片上制备Zn095Ca005O薄膜,用X射线衍射（XRD）研究薄膜的结构特性,用LS920荧光光谱仪测量了样品薄膜的PL谱,探讨了衬底温度对薄膜结晶质量和光学性质的影响。研究发现,衬底温度对薄膜的质量影响较小,450℃时制备的薄膜结晶质量最好;不同衬底温度对发光峰强度有影响;薄膜在可见光区显示出较高的透过性,在350－400nm范围内薄膜透过率骤然下降,在该范围内存在吸收边。     

利用快速热退火法制备多晶硅薄膜

为了制备多晶硅薄膜,研究了非晶硅薄膜的快速热退火（RTA）技术.先利用PECVD设备沉积非晶硅薄膜,然后把其放入快速热退火炉中进行退火.退火后的薄膜利用X射线衍射仪（XRD）和Raman测试仪分析其晶体结构,研究了退火温度、退火时间对非晶硅薄膜晶化的影响.     

常温H2S气敏薄膜的溶胶—凝胶制备及性能研究

以无机盐SnCl2·2H2O为主体原料,以Zn(CH3COO)2·2H2O2为掺杂剂,无水乙醇为溶剂,采用溶胶-凝胶（Sol-Gel)工艺制备了ZnO-SnO2薄膜;采用DTA-TG及XRD等分析手段研究了ZnO-SnO2薄膜的热分解和晶化过程,对ZnO-SnO2薄膜的结构进行了表征。研究了ZnO-SnO2薄膜的电学、气敏性能及机理。实验证明,ZnO-SnO2薄膜在常温下对H2S气体具有很好的气敏性能。     

Sol-Gel法制备KTN薄膜的结构和形貌研究(英文)

本文用XRD和SEM等分析测试手段,详细研究了Sol－Gel法不同工艺过程制得KTN薄膜样品的结构和形貌。发现KTN薄膜的结构和形貌主要受热处理工艺的烧结温度、升降温速率、烧结气氛等影响,详细分析讨论了产生这些影响的原因。在SrTiO3（100,111）基片上制备出了高取向、纯钙钛矿结构、表面形貌良好的KTN薄膜。     

Measurement of the thermal transport properties of dielectric thin films using the micro-Raman method

The micro-Raman method is a non-contact and non-destructive method for thermal conductivity measurement. To reduce the measurement error induced by the poor fit of the basic equation of the original micro-Raman method, we developed a new basic equation for the heat source ofa Gaussian laser beam. Based on the new basic equation, an analytical heat transfer model has been built to extend the original micro-Raman method to thin films with submicrometer- or nanometer-scale thickness. Experiments were performed to measure the thermal conductivity of dielectric thin films with submicrometer- or nanometer-scale thickness. The thermal resistance of the interface between dielectric thin films and their silicon substrate was also obtained. The obtained thermal conductivity of silicon dioxide film is 1.23 W/（m.K）, and the interface thermal resistance between silicon dioxide film and substrate is 2.35×10^-8 m^2.K/W. The thermal conductivity and interface thermal resistance of silicon nitride film are 1.07 W/（m.K） and 3.69×10^-8 m^2.K/W, respectively. The experimental results are consistent with reported data.