Preparation and Characterization of Nano-Particles PZT Ferroelectric Thin Films by RF-Magnetron Sputtering

Pt/Ti bottom electrodes were fabricated on SiO2/Si substrates by magnetron dual-facing-target sputtering system. Lead zirconate titanate(PZT) thin films were deposited on Pt/Ti/ SiO2/Si substrates by radio frequency (RF) magnetron sputtering system. The thickness of PZT thin films which were deposited for 5 h was about 800 nm. XRD spectra show that PZT thin films deposited in Ar ambience and rapid-thermal-annealed for 20 min at 700 ℃ have good crystallization behavior and perovskite structure. AFM micrographs show that mean diameter of crystallites is 70 nm and surface structures of PZT thin films are uniform and dense. Raw mean, root mean square roughness and mean roughness of PZT thin films are 34.357 nm, 2.479 nm and 1.954 nm respectively. As test frequency is 1 kHz, dielectric constant of PZT thin films is 327.6. Electric hysteresis loop shows that coercive field strength, residual polarization strength and spontaneous polarization strength of PZT thin films are 50 kV/cm, 10 μC/cm2 and 13 μC/cm2 respectively.     

Thin film chip resistors with high resistance and low temperature coefficient of resistance

High resistance thin film chip resistors(0603 type) were studied,and the specifications are as follows:1 k? with tolerance about ±0.1% after laser trimming and temperature coefficient of resistance(TCR) less than ±15×10-6/℃.Cr-Si-Ta-Al films were prepared with Ar flow rate and sputtering power fixed at 20 standard-state cubic centimeter per minute(sccm) and 100 W,respectively.The experiment shows that the electrical properties of Cr-SiTa-Al deposition films can meet the specification requirements of 0603 type thin film chip resistors when the deposition time was about 11 min and deposition films were annealed at 500 ℃ for 120 min.The morphologies of Cr-Si-TaAl film surfaces were examined by scanning electron microscopy(SEM).The analysis suggests that Ta and Al may be distributed in CrSi2 film with mixed form of several structures(e.g.,bridge-like,capillary-like or island-like structures),and such a structure distribution is responsible for high film resistance and low TCR of Cr-Si-Ta-Al film.     

Fabrication and characterization of VO2 thin films by direct current facing targets magnetron sputtering and low temperature oxidation

Low valence vanadium oxide（VO2-x） thin films were prepared on SiO2/Si substrates at room temperature by direct current facing targets reactive magnetron sputtering, and then processed through rapid thermal annealing. The effects of the annealing on the structure and phase transition property of VO2 were discussed. X-ray photoelectron spectroscopy, X-ray diffraction technique and Fourier transform infrared spectroscopy were employed to study the phase composition and structure of the thin films. The resistance-temperature property was measured. The results show that VO2 thin film is obtained after annealed at 320℃ for 3 h, its phase transition temperature is 56 ℃, and the resistance changes by more than 2 orders. The vanadium oxide thin films are applicable in thermochromic smart windows, and the deposition and annealing process is compatible with micro electromechanical system process.     

Studies on characteristics of nanostructure of N-TiO2 thin films and photo-bactericidal action

Pseudomonas aeruginosa strain （AS 1.50） and Bacillus subtilis strain （AS 1.439） from Ming lake were decomposed by photocatalytic nanostructure N-TiO2 thin films in a photo-reactor under UV irradiation. The different thickness nanostructure N-TiO2 thin films coated on mesh grid were prepared by sol-gel method and immobilized at 500 ℃ （films A） or 350 ℃ （films B） for 1 h in a muffle furnace. The results showed that N-TiO2 thin film B （8.18 nm thickness, 2.760 nm height and 25.15 nm diameter） has more uniform granular nanostructure and thinner flat texture than N-TiO2 thin film A （12.17 nm thickness, 3.578 nm height and 27.50 nm diameter）. The bactericidal action of N-TiO2 thin film A and film B for Pseudomonas aeruginosa strain （AS 1.50） and Bacillus subtilis varniger strain （AS1.439） were investigated in this work. More than 95% of photocatalytic bactericidal efficiency for Pseudomonas aeruginosa strain （AS 1.50） and 75% for Bacillus subtilis strain （AS 1.439） were achieved by using N-TiO2 thin films-B for 70-80 rain of irradiation during the photo-bactericidal experimental process. The results indicated that the photo-induced bactericidal efficiency of N-TiO2 thin films probably depended on the characteristics of the films.     

Measurement of the thermal transport properties of dielectric thin films using the micro-Raman method

The micro-Raman method is a non-contact and non-destructive method for thermal conductivity measurement. To reduce the measurement error induced by the poor fit of the basic equation of the original micro-Raman method, we developed a new basic equation for the heat source ofa Gaussian laser beam. Based on the new basic equation, an analytical heat transfer model has been built to extend the original micro-Raman method to thin films with submicrometer- or nanometer-scale thickness. Experiments were performed to measure the thermal conductivity of dielectric thin films with submicrometer- or nanometer-scale thickness. The thermal resistance of the interface between dielectric thin films and their silicon substrate was also obtained. The obtained thermal conductivity of silicon dioxide film is 1.23 W/（m.K）, and the interface thermal resistance between silicon dioxide film and substrate is 2.35×10^-8 m^2.K/W. The thermal conductivity and interface thermal resistance of silicon nitride film are 1.07 W/（m.K） and 3.69×10^-8 m^2.K/W, respectively. The experimental results are consistent with reported data.     

Effects of HfO2 buffer layers on the dielectric property and leakage current of Ba0.6Sr0.4TiO3 thin films by pulsed laser deposition

Ba0.6Sr0.4TiO3 （BST） thin films with and without HfO 2 buffer layer were fabricated on Pt/Ti/SiO2/Si substrates by pulsed laser deposition. Dependences of HfO 2 thickness on the dielectric property and leakage current of BST thin films were focused. The dielectric constant of BST thin films increased and then decreased with the increase of HfO 2 thickness, while the dielectric relaxation was gradually improved. The loss tangent and leakage current under positive bias decreased with the HfO 2 thickness increasing. The leakage current analysis based on the Schottky emission indicated an improvement of the BST/Pt interface with HfO 2 buffer layer. The loss tangent, tunability and figure of merit of optimized HfO 2 buffered BST thin film achieved 0.009 8, 21.91% （E max = 200 kV/cm）, 22.40 at 10 6 Hz, respectively.     

Fibrous TiO2 prepared by chemical vapor deposition using activated carbon fibers as template via adsorption, hydrolysis and calcinations

TiO2 fibers were prepared via alternatively introducing water vapor and Ti precursor carried by N2 to an APCVD （chemical vapor deposition under atmospheric pressure） reactor at ≤200 ℃. Activated carbon fibers （ACFs） were used as templates for deposition and later removed by calcinations. The obtained catalysts were characterized by scanning electron micros- copy （SEM）, transmission electron microscopy （TEM）, Brunauer, Emmett and Teller （BET） and X-ray diffraction （XRD） analysis The pores within TiO2 fibers included micro-range and meso-range, e.g., 7 nm, and the specific surface areas for TiO2 fibers were 141 m^2/g and 148 m^2/g for samples deposited at 100 ℃ and 200℃ （using ACFI700 as template）, respectively. The deposition temperature significantly influenced TiO2 morphology. The special advantages of this technique for preparing porous nano-material include no consumption of organic solvent in the process and easy control of deposition conditions and speeds.     

Preparation of carbon encapsulated iron nanoparticles with very thin shells by DC arc discharge

Carbon encapsulated iron nanoparticles(CEINPs) with very thin shells and good core-shell structures were prepared by DC arc discharge at argon intake temperature(AIT) of 800 ℃. The results of high resolution transmission electron microscope(HRTEM), energy dispersive X-ray(EDX) spectroscope, X-ray diffraction(XRD), and X-ray photoelectron spectroscope(XPS) characterizations on the product B show that the thickness of the carbon shells of CEINPs in the product B is in the range of ca. 0.5—5.3 nm, i. e., which can be as thin as only two layers of graphite. The average diameter of the CEINPs is about 24. 7 nm. The total content of Fe element in the product B is 77.0 wt%. The saturation magnetization(Ms) and coercivity(Hc) of the product B are 107.4 emu/g and 143 Oe, respectively. The formation of the CEINPs in the product B is discussed briefly.     

Preparation of AlN thin films for film bulk acoustic resonator application by radio frequency sputtering

Aluminum nitride （AlN） thin films with high c-axis orientation have been prepared on a glass substrate with an Al bottom electrode by radio frequency （RF） reactive magnetron sputtering. Based on the analysis of Berg＇s hysteresis model, the improved sputtering system is realized without a hysteresis effect. A new control method for rapidly depositing highly c-axis oriented AlN thin films is proposed. The N2 concentration could be controlled by observing the changes in cathode voltage, to realize the optimum processing condition where the target could be fixed stably in the transition region, and both stoichiometric film composition and a high deposition rate could be obtained. Under a 500 W RF power of a target with a 6 cm diameter, a substrate temperature of 450 ℃, a target-substrate distance of 60 mm and a N2 concentration of 25%, AlN thin film with preferential （002） orientation was deposited at 2.3 μm/h which is a much higher rate than previously achieved. Through X-ray diffraction （XRD） analysis, the full width at half maximum （FWHM） of AlN （002） was shown to be about 0.28°, which shows the good crystallinity and crystal orientation of AlN thin film. With other parameters held constant, any increase or decrease in N2 concentration results in an increase in the FWHM of AlN.     

Dissolved oxygen sensor based on sol-gel matrix doped with tris(2,2’-bipyridine)ruthenium dichloride

To establish a immobilization method of oxygen sensitive dye, a dissolved oxygen sensor based on a sol-gel matrix doped with ruthenium complex ([Ru(bpy)3]2+) as the oxygen-sensitive material is reported. The results indicate that the I0 /I100 value of the [Ru(bpy)3]2+-doped in tetraethylorthosilane (TEOS) composite films are estimated to be 10.6, where I0 and I100 correspond to the detected fluorescence intensities in pure nitrogen saturated water and pure oxygen saturated water, respectively. Also, the Stern-Volmer plot shows a very good linearity at low dissolved oxygen concentrations. The response time of the composite films is 5 s upon switching from nitrogen saturated water to oxygen saturated water and 10 s from oxygen saturated water to nitrogen saturated water. The dissolved oxygen sensors based on the ruthenium complex/TEOS composite films exhibit greater sensitivity, stability and faster response time as compared to the existing ones. Furthermore, the thin films possess greatly minimized dye leaching effect.     

Polycrystalline ZnSxSe1-x thin films deposited on ITO glass by MBE

MBE growth of ZnSxSe1-x thin films on ITO coated glass substrates were carried out using ZnS and Se sources with the substrate temperature ranging from 270℃ to 330℃. The XRD θ/2θ spectra resulted from these films indicated that the as-grown polycrystalline ZnSxSe1-x thin films had a preferred orientation along the (111) planes. The evaluated crystal sizes as deduced from the FWHM of the XRD layer peaks showed strong growth temperature dependence, with the optimized temperature being about 290℃. Both AFM and TEM measurements of these thin films also indicated a similar growth temperature dependence. High quality ZnSxSe1-x thin film grown at the optimized temperature had the smoothest surface with lowest RMS value of 1.2 nm and TEM cross-sectional micrograph showing a well defined columnar structure.     

ZnO薄膜的电化学沉积及其性能研究

以透明导电玻璃(TCO)为衬底,用硝酸锌水溶液作为电解液,采用阴极电沉积法合成了ZnO薄膜.通过改变电解液浓度、温度和沉积电压等实验条件,系统研究了锌氧化物薄膜材料的电化学沉积过程.用扫描电镜、X射线衍射、紫外-可见光谱法等技术对沉积物的形貌、结构及光学性质进行了表征.结果表明,通过控制电解液的浓度和温度及沉积电压等反应条件可以制备出不同形貌的ZnO薄膜.XRD结果表明,所得的ZnO纯度高且呈六方纤锌矿结构;光谱法研究表明,该薄膜在344 nm和552 nm处有两个吸收峰,禁带宽度为3.25 eV.     

Epitaxial α″-Fe_(16)N_2 Films Grown on NaCl (001) by Facing Target Sputtering

In 1972 ,KimandTakahashi[1] observedagiantsaturatedmagneticfluxdensity (Bs=2 .5 8T)whichwas 17%strongerthanthatofpureiron .BelievingthattheFe NfilmwasapolycrystallinemixtureofFeandα″ Fe16 N2 ,theydeducedthattheBsofα″ Fe16 N2 wouldbe2 .83Tfromthevolumeratioofα″ Fe16 N2 inthefilm .Sincethelargesaturatedfluxdensityisofimportance ,boththeoreticallyandfromthepointofviewofpracticalapplications,manyresearchershavemadegreateffortsandusedavarietyofmethodstosynthesizeα″ Fe16 N2 intobulkmat…     

Structure and Oxygen Sensing Properties of TiO2 Porous Semiconductor Thin Films

The TiO2thin films have attracted attention be-cause of their remarkable optical and electronic prop-erties[1,2]. They are used in a wide variety of applica-tions such as photocatalysts[3,4], gas sensors[5,6]andsolar cells. Titania exists mainly in three …     

硼掺杂纳米硅薄膜的热退火效应研究

采用等离子体增强化学气相沉积技术制备了硼掺杂氢化非晶硅薄膜,然后经过不同温度的热退火处理,获得硼掺杂纳米硅薄膜．结果表明,退火温度为700℃时,样品中开始有纳米晶形成,随着退火温度的增加,在1000℃时,薄膜的晶化率达到77％,晶粒大小为3．9nm．退火温度低于600℃时,光学带隙随着退火温度的升高而变窄,高于600℃...     

In－Situ Epitaxial Growth of Bi－Sr－Ca－Cu－O Superconducting Thin Films on Si（100） by rf Of－Axis Magnetron Sputering

Ｉｎ－ＳｉｔｕＥｐｉｔａｘｉａｌＧｒｏｗｔｈｏｆＢｉ－Ｓｒ－Ｃａ－Ｃｕ－ＯＳｕｐｅｒｃｏｎｄｕｃｔｉｎｇＴｈｉｎＦｉｌｍｓｏｎＳｉ（１００）ｂｙｒｆＯｆ－ＡｘｉｓＭａｇｎｅｔｒｏｎＳｐｕｔｅｒｉｎｇＱｉａｎＷｅｎｓｈｅｎｇ（钱文生）ＬｉｕＲｏｎｇ（刘...     

Ti-50．9at％Ni薄膜组织和相转变的研究

采用磁控溅射方法在Si片沉积了Ti-50．9at％Ni形状记忆合金薄膜,并将薄膜分别在不同温度下进行退火．利用示差扫描量热方法（DSC）、X射线衍射仪（XRD）、透射电镜（TEM）研究了薄膜退火前后形貌、相变特征及应力随退火温度的变化．实验结果表明：溅射态薄膜为非晶态,其晶化温度范围为430℃-535℃,晶化同时伴随着Ti3Ni4相的析出;退火后的薄膜随着退火温度的升高,Rs、Af、Ms均呈上升趋势．薄膜的残余应力随着退火温度的增加而逐渐减少．