香港科大的两项国家二等奖

从一九九九年起,由香港特别行政区推荐竞逐国家自然科学奖的研究项目,至今已有十一个项目得奖,今年的三个得奖项目分别来自香港中文大学与上海复旦大     

刍议改善药物稳定性的途径与方法

论述了影响药物稳定性的诸多因素,改善稳定性研究的目的与改善药物稳定性的途径与方法.     

Pt掺杂对Sb：SnO2薄膜酒敏性能的影响

采用非醇盐溶胶-凝胶工艺在Al2O3基片上旋转涂敷制得掺Sb的SnO2薄膜。再经直流溅射制得掺Pt的Sb：SnO2薄膜,探讨了不同Pt添加量对气敏性能的影响。结果表明,对Pt的溅射时间为90s时,元件对50ppm浓度乙醇气体的灵敏度高达43。经选择性研究表明,该元件有较好的选择性和优异的酒敏特性。     

Fabrication and characterization of VO2 thin films by direct current facing targets magnetron sputtering and low temperature oxidation

Low valence vanadium oxide（VO2-x） thin films were prepared on SiO2/Si substrates at room temperature by direct current facing targets reactive magnetron sputtering, and then processed through rapid thermal annealing. The effects of the annealing on the structure and phase transition property of VO2 were discussed. X-ray photoelectron spectroscopy, X-ray diffraction technique and Fourier transform infrared spectroscopy were employed to study the phase composition and structure of the thin films. The resistance-temperature property was measured. The results show that VO2 thin film is obtained after annealed at 320℃ for 3 h, its phase transition temperature is 56 ℃, and the resistance changes by more than 2 orders. The vanadium oxide thin films are applicable in thermochromic smart windows, and the deposition and annealing process is compatible with micro electromechanical system process.     

金属薄膜电阻率测量中界面势垒对电压的影响

在金属薄膜电阻率测量中,电压的准确测量非常重要。系统的研究了影响电压测量结果的各种误差因素,并分析了界面势垒、温差电势对测量结果的具体影响方式,推翻了认为界面势垒、温差电势非常小对测量结果没什么影响的观点。通过磁控溅射法制作了多个Au膜和Cu膜,利用四探针法对其进行了电学测量。实验结果很好地验证了理论分析。     

负载钨硅酸的复合薄膜的光致变色行为和机理

A novel reversible photochromic nanocomposite film based on a hybrid inorganic-organic matrix in which heteropolyacid H4SiW12O40 （SiWA） was entrapped in Si-O-Ti network was prepared. Structure, photochromic behaviors and mechanism of the film were investigated by means of infrared spectroscopy （IR）, ultraviolet-visible （UV-Vis） absorption spectra and electron spin resonance （ESR）. The results showed that heteropolyanion i.e. SiW12O^4- 40 （SiW12）, maintained a Keggin structure in the film and there was a strong interaction between anion SiW12 and cation R-NH^＋3 （R=link of hybrid composite）. The photochromic properties of the composite film originated from reversible charge transfer between the anions and cations. Under UV irradiation, the anion would be reduced via one-electron step with simultaneous oxidation of the cation, accompanied by a color change from colorless to blue. Bleaching could occur when the film was in contact with ambient air or 02 in the dark.     

Zn_(0.85)Co_(0.14)Cu_(0.01)O薄膜的制备及其微结构

用电子束蒸镀方法在250℃~450℃的衬底温度范围内在单晶Si衬底(111)晶面上成功生长了Zn0.85Co0.14Cu0.01O薄膜,并研究了衬底温度对薄膜质量的影响,结果表明:当衬底温度为400℃时,外延膜取向性最好,且其(002)衍射峰半高宽最窄,仅为0.408°。     

ZnO.85 Co0.14 Cu0.01O薄膜的制备及其微结构

用电子束蒸镀方法在250℃～450℃的衬底温度范围内在单晶Si村底(111)晶面上成功生长了Zn0.85 Co0.14 Cu0.01O薄膜,并研究了衬底温度对薄膜质量的影响,结果表明:当衬底温度为400℃时,外延膜取向性最好,且其(002)衍射峰半高宽最窄,仅为0.408°.     

非晶硅薄膜和结晶硅薄膜的拉曼光谱

以玻璃为衬底,利用等离子体增强化学气相沉积工艺制备了非晶硅(α-Si)薄膜,然后通过准分子激光晶化方式获得结晶硅(nc-Si)薄膜,采用激光显微拉曼光谱仪对非晶硅薄膜、结晶硅薄膜这两类薄膜的拉曼光谱效应和结晶质量等进行了定量分析。结果表明:当激光功率达到某一阈值时,非晶硅样品发生了晶化,即由非晶硅转化成了结晶硅,特征峰发生了46.8 cm-1的位移,薄膜的结晶性质发生根本变化。而结晶硅样品在激光功率变化过程中仅因能量积聚造成了薄膜内应力变化,激光能量消散后内应力恢复原来的状态,特征峰在±5.4 cm~(-1)位移内波动,薄膜的结晶性质并未发生明显变化,表明薄膜处于稳定的晶态结构。     

带绝缘层多层复合薄膜巨磁阻抗效应理论研究

根据带绝缘层的复合结构层状、丝状磁性材料的巨磁阻抗效应的实验研究结果,提出了带绝缘层的多层复合薄膜结构模型,采用将静态、动态两种磁化过程分开考虑的方法,同时考虑畴壁振动和磁畴转动两种磁化机制的影响,推导出当电流只通过高电导率的导电层时该模型的阻抗表达式,所得公式体现了"三明治"模型的特点,并弥补了它的不足.同时,通过有无外加直流磁场时阻抗表达式的异同,对袁望治等人的实验结果作了理论上的正确解释.