Electrochemical behavior of insulin on pretreated carbon black electrode enhanced with silicon carbide nanostructure

We previously reported the direct electrochemical detection of insulin at bare carbon electrodes. Here a novel modified acetylene carbon black paste electrode(SiC/CB-CPE), based on the outstanding characteristics of silicon carbide nanostructure,was developed for the electrooxidation of insulin in alkaline solution and it was characterized by cyclic voltammetry(CV) and electrochemical impedance spectroscopy(EIS) in 5 mmol/L Fe(CN)63-/4- solution. It is found that silicon carbide nanostructure doped into the CB-CPE greatly facilitates the redox electrochemistry of Fe(CN)63-/4- probe and the electrochemical oxidation of insulin. The electrooxidation of insulin is a one-electron and one-proton reaction and an irreversible adsorption-controlled electrode process. The anodic oxidation current increases linearly with the concentration of insulin from 1×10-7mol/L to1.2×10-6mol/L in 0.1 mol/L Na2CO3-NaHCO3 buffer solution(pH 10.0) and the detection limit was 50 nmol/L. In addition, the SiC/CB-CPE shows good sensitivity, reproducibility, renewability and capacity of resisting disturbance.     

甲烷二氧化碳重整中钴基催化剂催化性能影响因素的研究

采用常压固定床反应器,考察了负载型Co基系列催化剂的焙烧温度、钴含量以及还原温度对甲烷二氧化碳重整过程的影响;筛选出适宜的工艺条件。结果表明,7%Co/BaTiO3催化剂在反应温度为700℃,压力为0.1 MPa,nCO2∶nCH4为1∶1,气相空速GHSV为12 000 h-1的条件下表现出相对良好的催化活性,可得到87.68%的CH4转化率、75.37%的CO选择性和68.31%的H2收率。     

灰熔点测定仪电加热系统技术改造

由电炉的结构和电气原理出发,分析了HR-3C灰熔点测定仪电加热系统中的故障及产生原因,对仪器进行了技术改造,改造后仪器运行良好。     

A quantum chemistry study on reaction mechanisms of SO2 with O3 and H2O2

Reaction mechanisms of SO2 with O3 and H2O2 were investigated using quantum chemistry ab initio methods. Structures of all reactants, products, and transition states were optimized at the B3LYP/6-311G＋（3df,2p） level, and energy calculations were made at the G2M level. SO2 reactions with O3 and H2O2 occurred by O-abstraction and OH-abstraction by SO2, respectively, at length forming SO3＋O2 （3Eg） and H2SO4. For SO2＋O3 reactions the barrier height was predicted to be 9.68 kcal/mol with a rate constant of 3.61 × 10^-23 cm^3/（molecule.s） at 300 K, which is below the experimental upper limit. The rate constant predicted for this reaction accords well with the one provided by National Institute for Standards and Technology （NIST） in 250-500 K. For SO2＋H2O2 reactions the barrier height was predicted to be 62.39 kcal/mol with a rate constant of 2.48× 10^-61 cm^3/（molecule.s） at 300 K.     

Measurement of the thermal transport properties of dielectric thin films using the micro-Raman method

The micro-Raman method is a non-contact and non-destructive method for thermal conductivity measurement. To reduce the measurement error induced by the poor fit of the basic equation of the original micro-Raman method, we developed a new basic equation for the heat source ofa Gaussian laser beam. Based on the new basic equation, an analytical heat transfer model has been built to extend the original micro-Raman method to thin films with submicrometer- or nanometer-scale thickness. Experiments were performed to measure the thermal conductivity of dielectric thin films with submicrometer- or nanometer-scale thickness. The thermal resistance of the interface between dielectric thin films and their silicon substrate was also obtained. The obtained thermal conductivity of silicon dioxide film is 1.23 W/（m.K）, and the interface thermal resistance between silicon dioxide film and substrate is 2.35×10^-8 m^2.K/W. The thermal conductivity and interface thermal resistance of silicon nitride film are 1.07 W/（m.K） and 3.69×10^-8 m^2.K/W, respectively. The experimental results are consistent with reported data.     

Low-leakage diode-triggered silicon controlled rectifier for electrostatic discharge protection in 0.18-μm CMOS process

A diode-triggered silicon controlled rectifier （DTSCR） is being developed as an electrostatic discharge （ESD） protection device for low voltage applications. However, DTSCR leaks high current during normal operation due to the Darlington effect of the triggering-assist diode string. In this study, two types of diode string triggered SCRs are designed for low leakage consideration; the modified diode string and composite polysilicon diode string triggered SCRs （MDTSCR ＆ PDTSCR）. Compared with the conventional DTSCR （CDTSCR）, the MDTSCR has a much lower substrate leakage current with a relatively large silicon cost, and the PDTSCR has a much lower substrate leakage current with similar area and shows good leakage performance at a high temperature. Other DTSCR ESD properties are also investigated, especially regarding their layout, triggering voltage and failure current.     

Effect of CO2 enrichment on the glucosinolate contents under different nitrogen levels in bolting stem of Chinese kale (Brassica alboglabra L.)

The effects of CO₂ enrichment on the growth and glucosinolate (GS) concentrations in the bolting stem of Chinese kale (Brassica alboglabra L.) treated with three nitrogen (N) concentrations (5, 10, and 20 mmol/L) were investigated. Height, stem thickness, and dry weights of the total aerial parts, bolting stems, and roots, as well as the root to shoot ratio, significantly increased as CO₂ concentration was elevated from 350 to 800 μl/L at each N concentration. In the edible part of the bolting stem, 11 individual GSs were identified, including 7 aliphatic and 4 indolyl GSs. GS concentration was affected by the elevated CO₂ concentration, N concentration, and CO₂×N interaction. At 5 and 10 mmol N/L, the concentrations of aliphatic GSs and total GSs significantly increased, whereas those of indolyl GSs were not affected, by elevated atmospheric CO₂. However, at 20 mmol N/L, elevated CO₂ had no significant effects on the concentrations of total GSs and total indolyl GSs, but the concentrations of total aliphatic GSs significantly increased. Moreover, the bolting stem carbon (C) content increased, whereas the N and sulfur (S) contents decreased under elevated CO₂ concentration in the three N treatments, resulting in changes in the C/N and N/S ratios. Also the C/N ratio is not a reliable predictor of change of GS concentration, while the changes in N and S contents and the N/S ratio at the elevated CO₂ concentration may influence the GS concentration in Chinese kale bolting stems. The results demonstrate that high nitrogen supply is beneficial for the growth of Chinese kale, but not for the GS concentration in bolting stems, under elevated CO₂ condition. Project (No. 2007CB109305) supported by the National Basic Research Program (973) of China     

中国制造行业发展与碳排放脱钩测度研究

基于Tapio脱钩理论,引入节能弹性这一中间变量构建了制造业经济发展与碳排放脱钩的理论模型,对我国2000-2004年间和2005-2009年间28个制造业的CO2脱钩弹性和节能弹性进行了实证分析。结果表明这十年间基本所有制造业的低碳水平都有所提升,其经济增长与碳排放之间基本都已经处于弱脱钩状态,其中节能弹性指标显示能源效率的提高是关键原因。尽管如此,我国制造业节能减排的任务还很艰巨,这需要企业、政府和社会多方努力来共同完成。     

1-乙氧基杂氮硅三环化合物的合成及表征

以正硅酸乙酯（TEOS）和三乙醇胺为原料、氢氧化钾为催化剂、丙酮作溶剂,通过酯交换反应合成了1-乙氧基杂氮硅三环化合物,并初步探讨了反应条件的影响,并用IR对所合成的产物的结构进行了表征。     

无取向硅钢片磁致伸缩特性的实验研究

采用磁致伸缩测试仪测量无取向硅钢片50WW800的磁致伸缩系数,并对不同钢种及不同退火工艺的无取向硅钢片的磁致伸缩系数进行比较,发现磁致伸缩系数存在最大值,且与磁感的大小、退火时间的长短及试样方向等因素密切相关。