无取向硅钢片非常规处理工艺的探讨

本文探讨了平整和退火处理工艺对不同成分、不同工艺生产的成品硅钢片磁性能的影响，并得出中低牌号硅钢经平整和退火毡理后磁性能改善显著的结论。     

硅基纳米结构的发光

测量了掺Er氧化硅、掺Er富硅氧化硅、掺Er氮化硅和掺Er富硅氮化硅这四种薄膜室温下的光致发光谱，这四种薄膜在光激发下都具有Er^3＋离子的1．54μm峰位,Er^3＋离子1．54μm的峰强度与薄膜的退火温度有关，这些薄膜都分别在600℃、700℃、800℃、900℃、1000℃、1100℃的温度下同时退火，发现两种富硅薄膜的强度比不富硅薄膜的1.54μm峰强度要强。     

硅基片上光学器件实验设计

集成光学是光通信的重要发展方向,而硅是最有可能实现大规模集成的材料,所以硅基光学器件在集成光学中具有十分重要的地位。在通信、电子信息、光电信息等相关专业开设硅基集成光学课程是非常有必要的。本文以光学器件设计领域广泛应用的Lumeical软件为例,详细介绍了利用该软件设计片上布拉格光栅的教学环节和步骤。     

多孔硅发光

多孔硅是一种硅基纳米材料，硅基材料的研究是实现光电集成的关键，多孔硅的发光研究为硅基发光研究开辟了新的应用研究领域．对多孔硅发光的意义、多孔硅的各种制备方法进行了的报道，论述了多孔硅的微观结构、多孔硅的光致发光机制及多孔硅的光致发射光谱．     

牛ANGPTL1基因的电子克隆与序列分析

以牛的ANGPTL1基因为研究对象,利用生物信息学方法,对牛的ANGPTL1基因进行了电子克隆和序列分析,并对推导出的ANGPTL1蛋白结构与性质进行了初步分析。结果表明,牛的ANGPTL1基因序列长为2576 bp,该基因的编码序列长为1 476 bp,编码492个氨基酸,编码序列的两翼有135 bp的5’非编码区和785 bp的3’非编码区。DNA序列的G+C百分含量为44.31%,A+T百分含量为55.69%。该基因的核苷酸序列与人、黑猩猩、鼠和狗ANGPTL1基因的cDNA序列的相似性分别为91%、90%、82%和93%。在氨基酸序列上与人、黑猩猩、鼠和狗的相似性分别为95%、95%、92%和95%。用氨基酸序列构建的进化树显示,在人、牛、黑猩猩、狗、褐鼠、原鸡几种动物中,牛与狗的亲缘关系最近。     

框架式硅微陀螺仪的数学模型及工作状况分析

介绍了框架式硅微角振动陀螺仪的工作原理,给出了框架式硅微角振动陀螺仪的工作原理图和结构示意图。利用刚体转动的欧拉动力学方程,经过严格的力学分析和严密的数学演算,推导了框架式硅微角振动陀螺仪工作时,陀螺仪的基座与外框架之间的夹角θ和内框架、外框架之间夹角的关系的一个微分方程模型。并对该数学模型进行了简化,得到了近似解,最后利用近似解分析了框架式硅微角振动陀螺仪的基本工作规律。     

Silicon carbide nanotubes with special morphology prepared by super critical hvdrothermal method and photoluminescence character

Silicon carbide nanotubes (SiCNTs) with special morphology synthesized by supercritical hydrothermal method at 470 ℃ and 8 MPa have been reported in this paper.SiCNTs with special morphology were characterized by transmission electron microscopy (TEM) and high-resolution TEM (HRTEM).There are two kinds of silicon carbide with special morphology:One is oval SiCNTs with small aspect ratio,the other is bamboo cone-shape structure.SiCNTs have been analyzed by fluorescence spectrometer.The results indicate that the SiCNTs have strong photoluminescence (PL) property.The SiCNTs with oval shape are one kind of intermediate state of growth process of nanotube.The growth mechanism of silicon nanotubes has been proposed based on experiment data.The investigations of growth mechanism of SiCNTs with bamboo structure show that the defect produced in the growth process play the important role in SiCNTs with special structure.     

硼掺杂纳米硅薄膜的热退火效应研究

采用等离子体增强化学气相沉积技术制备了硼掺杂氢化非晶硅薄膜,然后经过不同温度的热退火处理,获得硼掺杂纳米硅薄膜．结果表明,退火温度为700℃时,样品中开始有纳米晶形成,随着退火温度的增加,在1000℃时,薄膜的晶化率达到77％,晶粒大小为3．9nm．退火温度低于600℃时,光学带隙随着退火温度的升高而变窄,高于600℃...     

Silicon carbide nanotubes with special morphology prepared by super critical hydrothermal method and photoluminescence character

Silicon carbide nanotubes (SiCNTs) with special morphology synthesized by supercritical hydrothermal method at 470 °C and 8 MPa have been reported in this paper. SiCNTs with special morphology were characterized by transmission electron microscopy (TEM) and high-resolution TEM (HRTEM). There are two kinds of silicon carbide with special morphology: One is oval SiCNTs with small aspect ratio, the other is bamboo cone-shape structure. SiCNTs have been analyzed by fluorescence spectrometer. The results indicate that the SiCNTs have strong photoluminescence (PL) property. The SiCNTs with oval shape are one kind of intermediate state of growth process of nanotube. The growth mechanism of silicon nanotubes has been proposed based on experiment data. The investigations of growth mechanism of SiCNTs with bamboo structure show that the defect produced in the growth process play the important role in SiCNTs with special structure.     

基于高新技术发展的创新文化建设刍议

适宜的创新文化不仅为高新技术发展提供了强大的精神动力和价值坐标，也为社会经济发展提供了一种终极理念，而且是高新技术可持续发展的坚强保障。首先，论述了我国传统文化与高新技术发展的冲突，然后提出了适宜我国高新技术发展的创新文化建设思路。