二氧化硅增强石英纤维基复合材料介电性能分析

对透波材料性能要求进行了论述;对我国正进行研究的石英纤维增强二氧化硅基复合材料的性能进行了分析;对透波材料的发展方向进行了预测。     

安徽省水稻土有效硅含量分布及影响因素

成土母质是影响土壤有效硅水平的主要因素,不同母质发育的水稻土有效硅平均含量顺序为：黄土性古河湖相沉积物＞近代黄泛＞淮河冲积＞石灰岩＞湖积物＞下蜀黄土＞长江冲积＞紫色砂页岩和第四纪红土＞板页岩和酸性结晶岩。土壤pH值和土壤有机质含量与土壤有效硅呈极显著正相关。安徽省水稻土有效硅含量不同地区差异很大,淮北平原＞江淮丘陵岗地＞沿江平原＞皖西山地＞皖南丘陵山地．     

硅基光电异质集成的发展与思考

光电子器件与传统微电子硅基互补金属氧化物半导体（CMOS）芯片的集成是未来信息技术的重要发展方向。现有硅基光电子集成技术得益于CMOS技术高集成度、低成本的优势,但主要采用硅材料制成,受限于硅材料本身的光电性质。硅基光电异质集成技术在利用CMOS晶圆制造优势的同时可兼容更多性能优异的光电异质材料,是未来光电集成技术的主要发展方向。文章介绍了该方向世界范围内的飞速发展形势及我国在该领域的研究基础,探讨了该领域未来的发展趋势和蕴藏的重要创新机遇。     

An ultrahigh vacuum chemical vapor deposition system and Si, GeSi epitaxy on a three-inch Si wafer

An ultrahigh vacuum chemical vapor deposition (UHV/CVD) system with reflection high energy electron diffraction (RHEED) was introduced. The Si epilayers and SiGe strained-layers on three-inch Si (100) substrates were grown in this UHV/CVD system. The substrate temperature during growth was from 550°C to 780°C. The properties of epilayers were characterized by high-resolution cross-sectional transmission electron microscopy (TEM), double crystal X-ray diffraction (DCXRD), and spreading resistance (SPR). A B-doped SiGe epilayer with uniform resistivity distribution was grown. Project supported by NSFC and Science Commission Program of Zhejiang Province of China.     

计算机辅助研究多晶硅加工能耗问题

传统的多晶硅加工能耗计算通常以晶体硅太阳电池产业链为依据,缺乏对光伏发电系统的能量回收期、再利用的考虑,且对于多晶硅生产加工中尾气的合理处理、热量的合理利用、减少污染等的能耗及能量转换研究不足,本文提出用计算机建模、数值分析、模拟等辅助手段,在传统的多晶硅加工能耗计算基础上,设计出含能量回收、转换、尾气、热量利用能量等的一个计算方案,最后讨论了多晶硅加工降耗问题。     

光伏组件在不同运行模式下的性能研究

通过对在三种运行模式（即微逆变器系统、电源优化器系统和组串式逆变器系统）下的光伏系统发电量进行比较与分析,研究了户外不同运行模式下晶体硅光伏组件的初期衰减情况,测量结果表明,三种系统的发电量组串逆变器系统的日发电量最高,微逆变器系统和电源优化器系统基本一致,而晶体硅组件在户外运行了3年之后功率平均衰减率为2.20%,同时,不同的运行模式下组件初期衰减会出现一定的差异,其中微逆变器安装方式的组件衰减率最低,通过EL测试尝试找出导致其衰减差异的原因。     

纳米硅水泥土屈服特性分析

在试验的基础上,首先描绘出纳米硅水泥土在子午面上的图形,假定偏平面上拉、压屈服点以椭圆线相连,建立了纳米硅水泥土的屈服准则。并与常规岩土材料的屈服准则进行了比较和试验验证,结果表明：建立的屈服函数比较符合纳米硅水泥土的屈服性状。     

利用计算机进行扩散硅压阻器件零点的温度补偿

通过建立数学模型,对扩散硅力一电转换装置进行了温度补偿实验,达到了很好的效果,理论和实验有很高的实用价值。     

Novel method for detection of anomalous structure characteristics of ID precision ultrathin monocrystalline silicon section cutting tool

The structure characteristics of ID precision ultrathin monocrystalline silicon section cutting machine-tool spindle with force-monitoring bearings functioning as force measuring sensors were detected with the new Hilbert theory based signal-wave envelope detection method, presented to replace the conventional hardware device in order to ensure that the signal is measured online with high fidelity. According to the probability of anomalous incidents in the cutting process, a mathematical recognition model has been designed and verified on an STC-22ID machine.     

Modeling and Simulation of Photoelectronic Lambda Bipolar Transistor

Based on the region model of lambda bipolar transistor （ LBT）, a dividing region theory model of PLBT is set up.simulated and verified. Firstly, the principal operations of different kinds of photoelectronic lambda bipolar transistor ,（ PLBT） are characterized by a simple circuit model. Through mathematical analysis of the equivalent circuit, the typical characteristics curve is divided into positive resistance, peak, negative resistance and cutoff regions. Secondly. by analyzing and simulating this model, the ratio of MOSFET width to channel length, threshold voltage and common emitter gain are discovered as the main structure parameters that determine the characteristic curves of PLBT. And peak region width, peak current value, negative resistance value and valley voltage value of PLBT can be changed conveniently according to the actual demands by modifying these parameters. Finally comparisons of the characteristics of the fabricated devices and the simulation results are made, which show that the analytical results are in agreement with the observed devices characteristics.