Preparation of AIN thin films for film bulk acoustic resonator application by radio frequency sputtering

Aluminum nitride (AIN) thin films with high c-axis orientation have been prepared on a glass substrate with an A1bottom electrode by radio frequency (RF) reactive magnetron sputtering. Based on the analysis of Berg's hysteresis model, the improved sputtering system is realized without a hysteresis effect. A new control method for rapidly depositing highly c-axis oriented AIN thin films is proposed. The N2 concentration could be controlled by observing the changes in cathode voltage, to realize the optimum processing condition where the target could be fixed stably in the transition region, and both stoichiometric film composition and a high deposition rate could be obtained. Under a 500 W RF power of a target with a 6 cm diameter, a substrate temperature of 450 ℃, a target-substrate distance of 60 mm and a N2 concentration of 25%, AIN thin film with prefer-ential (002) orientation was deposited at 2.3 μm/h which is a much higher rate than previously achieved. Through X-ray diffraction (XRD) analysis, the full width at half maximum (FWHM) of AIN (002) was shown to be about 0.28°, which shows the good crystallinity and crystal orientation of AIN thin film. With other parameters held constant, any increase or decrease in N2 con-centration results in an increase in the FWHM of AIN.     

Cu在CoN和CoSiN薄膜中的扩散研究

利用磁控溅射的方法在n型硅基底制备了Cu／CoN／Si（100）和Cu／CoSiN／Si（100）薄膜,并对它们进行了不同温度的退火．用原子力显微镜观察了它们的表面形貌．用扫描透射电镜能谱分析法得到了在不同退火温度下铜在上面两种薄膜中浓度与表面距离的分布,然后利用菲克第二定律对Cu／CoN／Si和Cu／CoSiN／Si体系中cu的扩散进行了计算和分析,得出中温条件（300℃-700℃）下Cu在CoN和CoSiN两种薄膜中的扩散系数表达式分别为8．98×10^-13exp（-0．45eV／kT）cHf／s和5．39×10^-11exp（-0．49eV／kT）Cm2／s．     

Preparation and Characterization of Nano-Particles PZT Ferroelectric Thin Films by RF-Magnetron Sputtering

Pt/Ti bottom electrodes were fabricated on SiO2/Si substrates by magnetron dual-facing-target sputtering system. Lead zirconate titanate(PZT) thin films were deposited on Pt/Ti/ SiO2/Si substrates by radio frequency (RF) magnetron sputtering system. The thickness of PZT thin films which were deposited for 5 h was about 800 nm. XRD spectra show that PZT thin films deposited in Ar ambience and rapid-thermal-annealed for 20 min at 700 ℃ have good crystallization behavior and perovskite structure. AFM micrographs show that mean diameter of crystallites is 70 nm and surface structures of PZT thin films are uniform and dense. Raw mean, root mean square roughness and mean roughness of PZT thin films are 34.357 nm, 2.479 nm and 1.954 nm respectively. As test frequency is 1 kHz, dielectric constant of PZT thin films is 327.6. Electric hysteresis loop shows that coercive field strength, residual polarization strength and spontaneous polarization strength of PZT thin films are 50 kV/cm, 10 μC/cm2 and 13 μC/cm2 respectively.     

高介电HfOxNy薄膜的表面形貌及光学特性研究

采用射频反应磁控溅射氧化铪钯的方法,在硅衬底成功制备了高介电HfOxNy薄膜．利用原子力显微镜,研究氮的掺入对薄膜表面形貌的影响,结果表明,N的掺杂改善了HfO2薄膜的表面形貌,同时抑制了高温退火过程中表面粗糙度的增加;通过椭圆偏振仪对薄膜的光学特性的研究表明,随退火温度的升高,薄膜的折射率和消光系数都呈上升趋势．     

溅射气压对Ti/Al多层膜结构和热稳定性的影响

为研究Ti/Al多层膜的结构和热稳定性与溅射气压的关系,采用对向靶直流磁控溅射法在0.5、2.0 Pa的溅射气压下制备了Ti/Al软X射线光学多层膜(Λ=9.25 nm,Г=0.3,N=20),并采用低角度X射线衍射、高角度X射线衍射和原子力显微镜对其结构和热稳定性进行表征.发现:低溅射气压(0.5 Pa)下制备的多层膜具有相对高质量、有序的结晶层,导致了相对较小的表面粗糙度,热稳定性好;高溅射气压(2.0 Pa)下制备的多层膜周期性结构相对较差,晶向较为无序,表面粗糙度较大,结构热稳定性差.可见,Ti/Al多层膜的结构和热稳定性是溅射气压的函数,低溅射气压下制备的多层膜会获得更好的结构和热稳定性.     

透明电极薄膜的制备及其电阻率测量普通物理实验

介绍了如何把“透明电极薄膜的制备及其电阻率测量”的实验引入到普通物理实验教学中,用简单的直流溅射镀膜仪制备不同厚度的金属氧化物透明电极薄膜(ZnO:A l薄膜),并用四探针测量了它们的电阻率。该实验是对已经在北京科技大学国家工科物理基础课程教学基地开设的大学生普通物理实验内容的新扩充[1]。     

Ta掺杂SnO2薄膜的散射机制

通过射频磁控溅射的方法制备了Ta掺杂SnO2薄膜,研究了薄膜的结构和低温下电阻率随磁场的变化规律.测量表明低温下呈现出负的磁电阻,但是,二维、三维弱局域理论均不能解释样品中出现的负的磁电阻现象.综合考虑了三阶微绕近似的s-d交换哈密顿的半经验公式Δρ/ρ=-B12ln(1+B22H2))和双能带模型的相关公式Δρ/ρ=B32H/(1+B42H2)拟合了样品在5 T以下的磁电阻的数据,理论和实验符合得很好.结果表明Ta掺杂SnO2薄膜中的磁电阻源于局域磁矩的传导电子散射.     

衬底温度对Zn0.95Ca0.05O薄膜结构和光学性质的影响

利用磁控溅射法在玻璃基片上制备Zn0.95Ca0.05O薄膜,用X射线衍射(XRD)研究薄膜的结构特性,用LS920荧光光谱仪测量了样品薄膜的PL谱,探讨了衬底温度对薄膜结晶质量和光学性质的影响。研究发现,衬底温度对薄膜的质量影响较小,450℃时制备的薄膜结晶质量最好;不同衬底温度对发光峰强度有影响;薄膜在可见光区显示出较高的透过性,在350-400 nm范围内薄膜透过率骤然下降,在该范围内存在吸收边。     

合金靶材择优溅射的SRIM模拟研究

利用SRIM2013软件,分别模拟计算了3组合金靶材Fe-Cr、Cu-Ni和Au-Ag在氩离子入射时的溅射产额,根据计算结果得出3组合金均存在择优溅射现象,择优溅射与金属原子的表面结合能有关的结论。同时模拟了 Au-Ag合金的溅射产额随入射离子能量和合金成分的变化情况,并分析其择优溅射机制。