UHV／CVD生长SiGe／Si材料分析及应用研究

以Si2H6和GeH4为生长气源,采用UHV／CVD系统在Si（100）衬底上生长了Sil—xGex合金和Sil—xGex／Si多量子阱结构。采用X射线双晶衍射仪、扫描电子显微镜和原子力显微镜等仪器设备对样品的组份、界面和表面形貌等晶体质量进行了研究。SiGe合金中Si和Ge摩尔分数的比值随着Si2H6和GeH4流量比的增加按比例线性增加,比例因子为2．57。生长的Si0．88Ge0．12合金样品的界面清晰,表面平整,平均粗糙度仅为0．4nm,位错密度低于104／cm2。六周期Si0．88Ge0．12／Si多量子阱的X射线双晶衍射摇摆曲线中存在多级卫星峰和Pendellosung条纹。这些结果表明SiGe合金和SiGe／Si多量子阱均具有很好的晶体质量。     

硬质薄膜研究综述

论述了硬质薄膜的发展历史,分析了近年来硬质薄膜的发展现状;叙述了合成硬质薄膜的几种方法,并对各种方法的优缺点进行了对比分析。指出类金刚石薄膜、纳米复合硬质薄膜等依然是今后一段时期的研究热点。     

CVD金刚石厚膜及焊接刀具的连接技术

分析了适合金刚石的焊接方法，介绍了CVD金刚石厚膜刀具的性能、应用和连接技术的研究现状，提出了金刚石实用化方面还需解决的主要焊接问题。     

An ultrahigh vacuum chemical vapor deposition system and Si, GeSi epitaxy on a three-inch Si wafer

An ultrahigh vacuum chemical vapor deposition (UHV/CVD) system with reflection high energy electron diffraction (RHEED) was introduced. The Si epilayers and SiGe strained-layers on three-inch Si (100) substrates were grown in this UHV/CVD system. The substrate temperature during growth was from 550°C to 780°C. The properties of epilayers were characterized by high-resolution cross-sectional transmission electron microscopy (TEM), double crystal X-ray diffraction (DCXRD), and spreading resistance (SPR). A B-doped SiGe epilayer with uniform resistivity distribution was grown. Project supported by NSFC and Science Commission Program of Zhejiang Province of China.     

衬底温度对金刚石膜选择性沉积的影响

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化学气相沉积法制备（类）金刚石薄膜专利技术分析

本文主要对化学气相沉积法制备(类)金刚石薄膜专利申请中专利申请的年度变化趋势、专利申请国家/地区布局、制备方法、申请人类型、专利技术改进方向、国内外主要申请人技术演进和发展等方面进行分析。研究表明,日本、美国等在该领域处于绝对领先地位,近年来国内的研究已取得了重大的进展,正在逐渐缩小与国外技术差距,切削加工和耐磨部件等应用领域是申请热点。     

CVD金刚石膜的光电性能及其在辐射探测器中的应用

The outstanding properties of CVD diamond film such as electronic, optical, thermal and mechanical and the high radiation hardness have made it an ideal candidate material for radiation detectors in severe environments. Fabrication of ＇detector grade＇ CVD diamond films and development of CVD diamond detectors have been leading edge subjects. Micro-strip gas chamber （MSGC） fabricated on CVD diamond substrate would overcome the charge-up effect and the substrate instability, which has been a hotspot in the research of gas detectors.     

大面积微波CVD反应腔中电磁场分布的研究

根据大面积微波CVD反应腔的简单模型，采用FIT算法计算了腔内的电磁场，并用计算机模拟了反应腔中电磁场的分布，寻找影响腔内电磁场分布的参数，试图为大面积金刚石膜微波反应腔的设计提供一定的依据。     

金刚石合成技术与研究现状简介

随着近几年人造金刚石技术研究的深入发展,大单晶金刚石合成技术得到了广泛关注,成为研究热点。本文结合当前人造金刚石合成现状,着重介绍了金刚石的合成技术发展,包括生产设备、合成方法、及主要研究机构的研究进度,并讨论了大单晶金刚石的应用研究进展。     

General synthesis of 2D rare-earth oxide single crystals with tailorable facets

Two-dimensional (2D) rare-earth oxides (REOs) are a large family of materials with various intriguing applications and precise facet control is essential for investigating new properties in the 2D limit. However, a bottleneck remains with regard to obtaining their 2D single crystals with specific facets because of the intrinsic non-layered structure and disparate thermodynamic stability of different facets. Herein, for the first time, we achieve the synthesis of a wide variety of high-quality 2D REO single crystals with tailorable facets via designing a hard-soft-acid-base couple for controlling the 2D nucleation of the predetermined facets and adjusting the growth mode and direction of crystals. Also, the facet-related magnetic properties of 2D REO single crystals were revealed. Our approach provides a foundation for further exploring other facet-dependent properties and various applications of 2D REO, as well as inspiration for the precise growth of other non-layered 2D materials.