氮化银结构特性的第一性原理研究

用第一性原理研究了氮化银的几种可能的结构。发现反ReO3结构的Ag3N、闪锌矿结构的AgN和萤石结构的AgN2满足力学稳定性的要求,并且给出了其结构特性。     

离子注入对钛合金表面力学性能的影响

在钛基合金Ti-6AI-4V上分别注入3×10~(17)、6×10~(17)、9×10~(17)和2×10~(18)N~+/cm~2四种剂量的氮离了后,进行显微硬度的测定及通过划痕试验测定其耐磨性,结果表明:经离子注入后的钛合金,其显微硬度及耐磨性均有不同程度的提高,但其提高的程度与注入剂量的大小有关,其中,以6×10~(17)和9×10~(17)N~+/cm~2为佳,表明在离子注入技术用于材料改性时,注入剂量与材料表面性能的提高有着密不可分的关系。     

Fe^3＋掺杂TiO2可见光催化降解酸性红的研究

研究了在可见光条件下,用实验室合成的Fe3＋掺杂TiO2为催化剂催化降解酸性红染料,重点考察了Fe3＋的掺杂量、Fe3＋掺杂TiO2为催化剂的添加量、酸性红溶液的初始浓度、溶液pH值、光照时间对降解率的影响.实验结果表明,Fe3＋掺杂比为1.5%、催化剂用量为1.5 g/L、pH为2.0、质量浓度为40 mg/L的酸性红100 mL,用白炽灯光照降解酸性红30 min,酸性红降解率可达98.45%.     

TiN薄膜常压化学气相沉积及动力学研究

在玻璃基片温度400℃和650℃之间，讨论了TiCl4-NH3-N2体系TiN常压化学气相沉积（APCVD）及动力学。在500－650℃温度范围内。TiN在高温玻璃表面沉积为反应物扩散控制，低于400℃为表面反应控制，其沉积速度明显受玻璃温度，反应物浓度和气体流速影响。     

光催化氧化-分光光度法测定巢湖水体中的总氮

用TiO2光催化氧化将巢湖水体中各种化合物含的氮转化为硝酸盐后用分光光度法进行定量测定,同时研究了各种光催化氧化反应条件对氮的降解率影响.结果表明该法的线性范围为0.00-0.35mg/L,检出限为2.55×10-3mg/L.     

氮化钾基材料的合成研究进展

氮化镓，是直接带隙半导体材料，在室温下有很宽的带隙（3.39eV）。它在光电子器件如蓝光、紫外、紫光等光发射二极管和激光二极管方面有着重要的应用。本文系统地介绍了氮化镓的各种制备方法，对其结构和性能关系的研究,揭示了它在半导体领域广泛且重要的应用前景。     

w-BN (001)B面上铁(钴、镍)纳米线的高自旋极化研究

文章用密度泛涵理论(DFT)和广义梯度近似(GGA)研究了铁、钴和镍在纤锌矿结构氮化硼(w-BN)(001)B面上排列的纳米线的电子结构和磁性,计算了原子的磁矩和态密度,发现在w-BN(001)的B面上的铁和钴纳米线具有高自旋极化的特性,并与孤立的铁、钴和镍原子线的电子结构进行了比较研究,这种高自旋极化材料在微电子器件中可以用作自旋过滤器.     

Preparation and characterization of TiO2/expanded graphite

In order to obtain anatase TiO2/expanded graphite with high expansion volume, titania gel was introduced to expandable graphite surface by sol-gel process, and then the composite was expanded and calcined at high temperature. The samples were analysed by using scanning electron microscope (SEM), X-ray diffraction(XRD), energy disperse spectroscopy(EDS), and differential scanning calorimetry(DSC). The optimal conditions for preparation are as follows: the molar ratio of tetrabutyl orthotitanate to triethanolamine is 1∶0.4, and the calcination and expansion temperature is in the range of 650-750 °C. Under such conditions, the expansion volume of composites could reach 98 mL/g, and the mass loss ratio is less than 5%. The analysis shows that lower temperature and smaller particle size of graphite are helpful to the formation of anatase-type of TiO2, but larger particle size will lead to lower mass loss ratio, and higher temperature and larger particle size will lead to higher expansion volume.     

Treating dye wastewater by TiO2 coated on coal cinder

We investigated the photocatalytic degradation of dye wastewater by using titanium dioxide （TiO2） coated on a coal cinder. The coal cinder was used as the carrier, with a thin film of TiO2 coated on it by using the sol-gel method. Using the Congo red as the model pollutant for dye wastewater, we studied the decolorization efficiency, and effects of TiO2 film thickness and roasting temperature on the efficiency. We also evaluated the recycling and regeneration of the immobilized TiO2 （TiO2/cinder）. Results show that the decolorization rate of Congo red solution was more than 98% after 2.h treatment when we used TiO2/cinder calcined at 500 ℃ for 2 h and coated four times as the photocatalyst. At the same time, the TiO2/cinder remained high catalytic activity after being reused and regenerated for many times.     

Preparation of AlN thin films for film bulk acoustic resonator application by radio frequency sputtering

Aluminum nitride （AlN） thin films with high c-axis orientation have been prepared on a glass substrate with an Al bottom electrode by radio frequency （RF） reactive magnetron sputtering. Based on the analysis of Berg＇s hysteresis model, the improved sputtering system is realized without a hysteresis effect. A new control method for rapidly depositing highly c-axis oriented AlN thin films is proposed. The N2 concentration could be controlled by observing the changes in cathode voltage, to realize the optimum processing condition where the target could be fixed stably in the transition region, and both stoichiometric film composition and a high deposition rate could be obtained. Under a 500 W RF power of a target with a 6 cm diameter, a substrate temperature of 450 ℃, a target-substrate distance of 60 mm and a N2 concentration of 25%, AlN thin film with preferential （002） orientation was deposited at 2.3 μm/h which is a much higher rate than previously achieved. Through X-ray diffraction （XRD） analysis, the full width at half maximum （FWHM） of AlN （002） was shown to be about 0.28°, which shows the good crystallinity and crystal orientation of AlN thin film. With other parameters held constant, any increase or decrease in N2 concentration results in an increase in the FWHM of AlN.