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The authors have fabricated bottom gate amorphous silicon thin film transistor (a-Si TFT) array using five-step lithography process.The device shows a field effect mobility of 0.43 cm 2 /(V·s),on/off ratio of 7.5×10 6 and threshold voltage of 0.87 V.The instability of a-Si TFT is ascribed to the defect state in the a-Si channel and SiNx/a-Si interface.The present a-Si TFT array with SiN x insulator could be a significant step towards the commercialization of active matrix organic lighting diode (AM-OLED) te... 相似文献
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