In situ growth of large-area and self-aligned graphene nanoribbon arrays on liquid metal

Intrinsic graphene features semi-metallic characteristics that limit its applications in electronic devices, whereas graphene nanoribbons (GNRs) are promising semiconductors because of their bandgap-opening feature. However, the controllable mass-fabrication of high-quality GNR arrays remains a major challenge. In particular, the in situ growth of GNR arrays through template-free chemical vapor deposition (CVD) has not been realized. Herein, we report a template-free CVD strategy to grow large-area, high-quality and self-aligned GNR arrays on liquid copper surface. The width of as-grown GNR could be optimized to sub-10 nm with aspect ratio up to 387, which is higher than those of reported CVD-GNRs. The study of the growth mechanism indicates that a unique comb-like etching-regulated growth process caused by a trace hydrogen flow guides the formation of the mass-produced self-aligned GNR arrays. Our approach is operationally simple and efficient, offering an assurance for the use of GNR arrays in integrated circuits.     

Ultra-thin metal-organic framework nanoribbons

Structure engineering of metal-organic frameworks (MOFs) at the nanometer scale is attracting increasing interest due to their unique properties and new functions that normally cannot be achieved in bulk MOF crystals. Here, we report the preparation of ultra-thin MOF nanoribbons (NRBs) by using metal-hydroxide nanostructures as the precursors. Importantly, this general method can be used to synthesize various kinds of ultra-thin MOF NRBs, such as MBDC (M = Co, Ni; BDC = 1,4-benzenedicarboxylate), NiCoBDC, CoTCPP (TCPP = tetrakis(4-carboxyphenyl)porphyrin) and MIL-53(Al) NRBs. As a proof-of-concept application, the as-prepared ultra-thin CoBDC NRBs have been successfully used as a fluorescent sensing platform for DNA detection, which exhibited excellent sensitivity and selectivity. The present strategy might open an avenue to prepare MOF nanomaterials with new structures and unique properties for various promising applications.     

铝或磷原子掺杂下锯齿型硅烯纳米带的自旋热电效应

基于密度泛函理论和非平衡格林函数方法,研究了铝或磷原子掺杂对锯齿型硅烯纳米带输运特性和自旋热电效应的影响.发现通过改变铝或磷原子掺杂位置,其费米面处的自旋极化率可以达到100%或-100%,同时其自旋向上(对于-100%)和自旋向下(对于100%)对于塞贝克效应也得到明显加强.甚至在特殊的掺杂位置和电子能量时,其自旋塞贝克系数可以远大于相应的电荷塞贝克系数.表明用铝或磷掺杂后的锯齿型硅烯纳米带可以用作制备理想的热自旋器件.     

石墨烯微电子材料潜在应用研究

在硅电子材料即将发展到顶峰时,石墨烯以其优良的导体和半导体性质将成为延续硅材料的主流微电子材料;详述了石墨烯的结构与电学性质,从而说明其作为微电子材料的优势,并列举了在微电子器件构建中已经取得的成果及构建器件的方法,简述了相应石墨烯的制备方法.     

新型一维碳基纳米材料的自旋热电效应

基于第一性原理的方法,从原子层面上研究了锯齿型石墨烯纳米条带与碳链以及石墨烯纳米片组成的一维碳基纳米材料的自旋热电性能.研究发现在费米面处自旋向下的传输函数压抑至零,而自旋向上的传输函数大约为0.25,具有理想的半金属性质.另外声子部分热导明显小于对应的电子部分热导.同时低温区域(80 K附近)自旋Seebeck系数明显得到加强,导致了电荷和自旋热电品质因子接近40.并且在室温区域,自旋热电品质因子明显大于对应的电荷热电品质因子.