高介电HfOxNy薄膜的表面形貌及光学特性研究

采用射频反应磁控溅射氧化铪钯的方法，在硅衬底成功制备了高介电HfOxNy薄膜．利用原子力显微镜，研究氮的掺入对薄膜表面形貌的影响，结果表明，N的掺杂改善了HfO2薄膜的表面形貌，同时抑制了高温退火过程中表面粗糙度的增加；通过椭圆偏振仪对薄膜的光学特性的研究表明，随退火温度的升高，薄膜的折射率和消光系数都呈上升趋势．

The Morphology and Optical Property of Hfoxny Dielectric Thin Films

The high - k dielectric HfOxNy films were prepared by rf reactive sputtering of HfO2 target. The effects of nitrogen incorporation on the morphology of HfOxNy thin films were investigated by AFM. The results show that nitrogen incorporation can improve the morphology of HfO2 films and can inhibit the surface roughness. We also investigated the optical properties of HfOxNy thin films. The results show that both the refractive index n and the extinction coefficient k of the HfOxNy thin films increase with increasing post - deposition annealing temperatures.