| 短脉冲紫外激光辐照下硅材料表面剥离过程研究 |
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| 引用本文： | 张健,曹继华,王光伟,王锦. 短脉冲紫外激光辐照下硅材料表面剥离过程研究[J]. 天津工程师范学院学报, 2005, 15(4): 8-10,21 |
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| 作者姓名： | 张健 曹继华 王光伟 王锦 |
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| 作者单位： | 天津工程师范学院,电子工程系,天津,300222 |
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| 摘 要： | 利用紫外激光对硅材料进行加工时需要估算硅材料表面剥离深度、温度分布与入射光功率密度的关系。激光与硅材料相互作用涉及多种复杂的物理现象，直接利用现有理论进行计算，确定相应的温度分布和剥离深度十分困难。文章探讨了在不同功率密度范围内，根据激光与物质相互作用主要形式的不同，建立相应的估算方法。实践证明，在一定功率密度范围内，估算值较好地符合了实验测定数据。
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| 关 键 词： | 紫外激光 硅材料 等离子体吸收 二次辐射 |
| 文章编号： | 1673-1018（2005）04-0008-03 |
| 收稿时间： | 2005-09-27 |
| 修稿时间： | 2005-09-27 |
Study on surface peel process of Si under radiation of brief pulse UV laser |
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| ZHANG Jian,CAO Ji-hua,WANG Guang-wei,WANG Jin. Study on surface peel process of Si under radiation of brief pulse UV laser[J]. JournalofTianjinUniversityofTechnologyandEducation, 2005, 15(4): 8-10,21 |
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| Authors: | ZHANG Jian CAO Ji-hua WANG Guang-wei WANG Jin |
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| Affiliation: | Department of Electronic Engineering, Tianjin University of Technology and Education, Tianjin 300222, China |
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| Abstract: | It is necessary to estimate peel depth, temperature distribution and density for icident ray power during UV laser processing of silicon. The laser silicon interaction con cerns varions complex aspects and it is very difficult to ascertain peel depth and temperature distribution by using existing theory. Different estimation methods are established according to laser matter interactions in different power density range. Experiment shows that measured data in certain power density range accord well with the calculations. |
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| Keywords: | UV laser silicon plasma absorption reradiation |
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