| 晶体三极管特性曲线——V_(cE)=OV与V_(cE)>1V的区别 |
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| 引用本文： | 李升潜,李升源. 晶体三极管特性曲线——V_(cE)=OV与V_(cE)>1V的区别[J]. 赣南师范学院学报, 1996, 0(6) |
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| 作者姓名： | 李升潜 李升源 |
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| 作者单位： | 赣南医学院附属医院!赣州341000(李升潜)，南方冶金学院自动化系!赣州341000(李升源) |
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| 摘 要： | 对晶体三极管输入特性进行分析,利用电流表、电压表测量,证实当V_(CE)=0V时,集电极比发射极先导通;当V_(CE)>1V时,晶体管处于放大状态.
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| 关 键 词： | 三极管输入特性 PN结 势垒高度 |
THE CHARACTERISTIC CURVES OF TRANSISTOR TRIODE——THE DIFFERENCES BETWEEN VCE.= 0V AND VCE>1V |
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| Li Shengqian Li Shengyuan. THE CHARACTERISTIC CURVES OF TRANSISTOR TRIODE——THE DIFFERENCES BETWEEN VCE.= 0V AND VCE>1V[J]. Journal of Gannan Teachers' College(Social Science(2)), 1996, 0(6) |
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| Authors: | Li Shengqian Li Shengyuan |
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| Affiliation: | Li Shengqian Li Shengyuan |
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| Abstract: | The authors studies the input characteristic of transistor triode with galvanometer and voltmeter,and proves that undetr Vc_E = 0V the collector occurs electric current bdfore the emitter,and transistor triode is in magnifying state under Vc_E>lV. |
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| Keywords: | transistor trodel input characteristic P-N junction electric field intensity |
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