| 宏观参量对a—C：F薄膜刻蚀速率的影响 |
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| 引用本文： | 孔华,冯金福.宏观参量对a—C：F薄膜刻蚀速率的影响[J].常熟理工学院学报,2011,25(8):43-45,50. |
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| 作者姓名： | 孔华 冯金福 |
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| 作者单位： | 常熟理工学院物理与电子工程学院,江苏常熟,215500 |
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| 摘 要： | 在ECR刻蚀系统中氧等离子体的放电存在两种模式，即微波功率低于500W时的低密度放电和微波功率高于500W时的高密度放电．a—C：F薄膜的刻蚀速率随着氧分压的增加而降低，是由于气压增加时，等离子体的电子温度降低及等离子体鞘电位降低造成．a—C：F薄膜的刻蚀速率随着氧气流量的增加相应地增加，是由于在氧分压保持0．1Pa不变的条件下，氧流量增加使氧原子在真空室的驻留时间变短造成．
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| 关 键 词： | 宏观参量 a—C：F薄膜 刻蚀速率 |
The Effects of Macroscopic Parameters on Etch Rate of a-C:F Film |
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| KONG Hua,FENG Jin-fu.The Effects of Macroscopic Parameters on Etch Rate of a-C:F Film[J].Journal of Changshu Institute of Technology,2011,25(8):43-45,50. |
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| Authors: | KONG Hua FENG Jin-fu |
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| Institution: | KONG Hua,FENG Jin-fu (School of Physics and Electronic Engineering,Changshu Institute of Technology,Changshu 215500,China) |
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| Abstract: | Discharge of oxygen plasma has two patterns in ECR etching system:low density discharge when microwave power is lower than 500w and high density discharge when microwave power is higher than 500w. Thee tch rate of a-C:F film decreases as the pressure of oxygen increases. It may be because the electronic temperature and the sheath voltage of plasma decrease when the pressure of oxygen increases. The etch rate of a-C:Ff ilm rises as the flow of oxygen increases. It may be because under the condition of the pr... |
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| Keywords: | parameters a-C:F films etch rate |
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