| 有机静电感应三级管动作特性的实验分析 |
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| 引用本文： | 薛严冰,王东兴.有机静电感应三级管动作特性的实验分析[J].上海大学学报(英文版),2006,10(4):352-356. |
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| 作者姓名： | 薛严冰 王东兴 |
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| 作者单位： | 1. 大连交通大学
2. 哈尔滨科技大学 |
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| 基金项目： | Project supported by Special Funds of National Rail way Ministry(Grant No .J2000Z057),and Scientific Research Foundation forthe Returned Overseas Chinese Scholars , National EducationMinistry (Grant No .2000-367) |
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| 摘 要： | 1 Introduction Organic semiconductors are receiving considerableattention due to their remarkable advantages especiallyvarious manufacturing methods ,lowcost and plentifulmaterials .Ebisawa ,et al.1]fabricated the first poly-mer-based transistor in 1983 . Since then,lots of re-search works have been done in the filed of organicmaterial-based transistors .It was reported that organicthin-fil m transistor ( OTFT) fabricated by usingorganic semiconductor material copper-phthalocyanine(CuPc)2…
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| 关 键 词： | 薄膜晶体管 静电感应晶体管 数值模拟 实验分析 |
| 文章编号： | 1007-6417（2006）04-0352-05 |
| 收稿时间： | 2004-08-30 |
| 修稿时间： | 2005-05-24 |
Experimental analysis of operating characteristics of organic semiconductor static induction transistor |
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| Yan-bing Xue Ph. D.,Dong-xing Wang.Experimental analysis of operating characteristics of organic semiconductor static induction transistor[J].Journal of Shanghai University(English Edition),2006,10(4):352-356. |
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| Authors: | Yan-bing Xue Ph D Dong-xing Wang |
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| Institution: | (1) School of Electrical and Information, Dalian Jiaotong University, 116028 Dalian, P.R. China;(2) School of Applied Sciences, Harbin University of Science and Technology, 150080 Harbin, P.R. China |
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| Abstract: | The organic static induction transistor (OSIT) fabricated with organic semiconductor material copper-phthalocyanine(CuPc) is discussed in the paper. It has Schottky Gate electrode and sandwich structure of Au/CuPc/Al/CuPc/Au/glass. The operation mechanism of the device is studied on the physical model with practical parameters. Potential distribution and field intensity distribution in the conduction channel are computed by using finite-element method. By processing static experimental data with some mathematic tools, the V-I expression of CuPc/Al Schottky Gate is obtained and it is verified that OSIT has insaturation current property along with the increase of Drain bias voltage. By using AC small signal circuit model and appropriate numerical simulation method, the dynamic operating characteristics are investigated, and some influenced factors are analyzed. |
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| Keywords: | thin film transistor organic static induction transistor numerical simulation |
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