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| 利用深掺杂Si所研制的微型流量传感器 | |
| 引用本文： | 李兴,梁家昌.利用深掺杂Si所研制的微型流量传感器[J].天津工程师范学院学报,2000,10(3):5-9. |
| 作者姓名： | 李兴 梁家昌 |
| 作者单位： | 1. 天津职业技术师范学院,天津,300222 2. 中国民航学院基础科学部,天津300300 3. 美国辛辛那搨大学电机与计算机工程系,俄亥俄洲,45221 |
| 基金项目： | Supported by the Educational Foundation of Civil Aviation Administration of China under Contract (99-3-01). |
| 摘 要： | 使用深掺杂方法在Si材料中掺入Au原子后，其电阻率随温度T的变化关系从主要依赖于T-3/2项的浅掺杂材料变成主要依赖于exp(-E／KT)项的深掺杂材料，从而大幅度地提高了掺金Si材料对温度的敏感性。这样在理论上深掺杂Si材料比浅掺杂Si材料对温度的敏感性提高了约1000倍。对于深掺杂方法制成的微型流量传感器特性的测量证明了以上理论。深掺杂Si材料的应用不但大大提高了微型流量传感器的灵敏度，也大幅度地降低了响应时间。 |
| 关 键 词： | 微型流量传感器 深掺杂 惠斯登电桥 微机械 |
| 文章编号： | 1008-5718(2000)03-0005-05 |
| 修稿时间： | 2000-05-28 |
Micro-flow-sensor of Si with deep impurities |
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| LI Xing,LIANG Jia-chang,H.Therman Henderson.Micro-flow-sensor of Si with deep impurities[J].Journal of Tianji University of Technology and Education,2000,10(3):5-9. | |
| Authors: | LI Xing LIANG Jia-chang HTherman Henderson |
| Institution: | LI Xing ;(Tianjin Vocational Technical Teachers'College,Tianjin 300222,China;);LIANG Jia-chang ;(Department of Basic Sciences,Civil Aviation Institute of China,Tianjin 300222,China;);H.Therman Henderson ;(Department of electrical and computer engineering,University of Chincinnati OH 45221,U.S.A)) |
| Abstract: | The change of resistivity of single crystal silicon material based on deep impurities mainly depends on an exponential term exp(- E/KT),which can enhance the temperature sensitivity by as much as 1,000 times than the T- 3/2term based on shallow impurities.It has been proved by the measurements of the micro- flow- sensors using Si with deep impurities. The application of the deep impurity silicon material not only enhances the sensitivity of the micro- flow- sensors,but asso reduces their response time greatly. |
| Keywords: | micro flow sensor deep impurity wheatstone bridge micro machine |
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