| 正交法优化电沉积CuInSe2薄膜条件的研究 |
| |
| 引用本文： | 徐玲,刘昌龄,吴世彪,童彬,陈少华,徐立红.正交法优化电沉积CuInSe2薄膜条件的研究[J].安徽教育学院学报,2006,24(3):57-60. |
| |
| 作者姓名： | 徐玲 刘昌龄 吴世彪 童彬 陈少华 徐立红 |
| |
| 作者单位： | 1. 安徽建筑工业学院,材料科学与工程系,安徽,合肥,230022
2. 安徽教育学院,化学系,安徽,合肥,230061 |
| |
| 基金项目： | 安徽省教育厅自然科学基金 |
| |
| 摘 要： | 本研究以导电玻璃作基体材料,在0.1 mol/L的柠檬酸和KC1溶液中,在pH为1.5的条件下,采用了正交实验设计和电沉积法,制备了不同的CuInSe2薄膜样品,分析了各样品的X射线衍射测试结果,优选出较佳的电沉积条件,制备了质量较好黄铜矿型的CuInSe2薄膜。
|
| 关 键 词： | 电沉积 CuInSe2薄膜 正交法 X射线衍射分析 |
| 文章编号： | 1001-5116（2006）03-0057-04 |
| 收稿时间： | 2006-01-15 |
| 修稿时间： | 2006年1月15日 |
Researching Electrodeposit Conditions of CulnSe2 Thin Film through Method of Orthogonal Experiment |
| |
| XU Ling,LIU Chang-ling,WU Shi-biao,TONG Bin,CHEN Shao-hua,Xu Li-hong.Researching Electrodeposit Conditions of CulnSe2 Thin Film through Method of Orthogonal Experiment[J].Journal of Anhui Institute of Education,2006,24(3):57-60. |
| |
| Authors: | XU Ling LIU Chang-ling WU Shi-biao TONG Bin CHEN Shao-hua Xu Li-hong |
| |
| Institution: | Department of Material Science and Engineering, Anhui Institute of Architecture and Industry, Hefei , 230022, China; Chemistry Department, Anhui Institute of Education, Hefei , 230061, China |
| |
| Abstract: | This paper mainly studies the electrochemical process by which the Cu_2,In_3 and SeO3 is deposited on conducting glass fundus to form CuInSe_2 thin film from the plating electrolyte containing 0.1 mol/L citric acid and potassium chloride,in which pH value is 1.5.By comparing all CuInSe_2 thin film samples' XRD patterns,the optimal electrodeposit conditions are ascertained by the method of orthogonal experiment and variance analysis.According to the optimal conditions the quality CuInSe_2 thin film was prepared.The CuInSe_2 thin film and copper pyrites' crystal lattice are the same. |
| |
| Keywords: | Electrodepositionl copper pyrites CuInSe_2 thin film orthogonal experiment XRD analysis |
| 本文献已被 CNKI 维普 万方数据 等数据库收录！ |
|
