黑硅材料在光电探测研究领域的前景及挑战

在详细介绍黑硅材料的形成机理，包括超过固溶度的S原子引起的高红外吸收基础上，介绍了黑硅材料在光电探测研究领域的应用，并指出黑硅光电探测器目前面临如何平衡退火消除缺陷及由此带来的红外吸收下降的问题，但黑硅探测器件的增益机制问题仍然不清楚，有待解决．

Prospect and Challenge Applying the Black Silicon on Optoelectronic Research Field

Based on the detailed introduction of formation mechanism of the black silicon including the infrared absorption intro-duced by the S atoms with concentration over the solid solubility in silicon, the work applying the black silicon on the optoelectron-ic research field are reviewed; moreover, its display the infrared absorption dropping introduced by high temperature annealing bring ditticulties and challenge on its application as well as reasons for the black silicon detector＇ s gain mechanism which is still unknown for further researches.