| 基于MEMS技术的硅衬底背面减薄结构圆形射频微电感 |
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| 引用本文： | 王西宁,赵小林,周勇,戴序涵,蔡炳初. 基于MEMS技术的硅衬底背面减薄结构圆形射频微电感[J]. 上海大学学报(英文版), 2005, 9(4): 361-364. DOI: 10.1007/s11741-005-0053-7 |
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| 作者姓名： | 王西宁 赵小林 周勇 戴序涵 蔡炳初 |
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| 作者单位： | [1]Key Laboratory for Thin Film and Micro Fabrication of Ministry of Eduvation, Institute of Micro/ Nanometer Science and Technology, Shanghai Jiaotong University, Shanghai 200030, P.R. China |
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| 摘 要： | This paper discusses fabrication and performance of novel circular spiral inductors on silicon. The substrate materials underneath the inductor coil are removed by wet etching process. In the fabrication process, fine polishing of the photoresist is used to simplify the processes and ensure perfect contact between the seed layer and the top of pillars. Dry etching technique is used to remove the seed layer. The results show that Q-factor of the inductor is greatly improved by removing silicon underneath the inductor coil. The spiral inductor with line width of 50 μm has a peak Q-factor of 10 for the inductance of 2.5 nH at frequency of 1 GHz, and the resonance frequency of the inductor is about 8.5 GHz. For the inductor of conductor width 80 μm, the peak Q-factor increases to about 17 for inductance of 1.5 nH in the frequency range of 0.05 -3.00 GHz.
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| 关 键 词： | 无线电频率 微电子系统 循环螺旋感应器 硅元素 |
| 文章编号： | 1007-6417（2005）04-0361-04 |
| 收稿时间： | 2003-12-12 |
| 修稿时间： | 2004-09-01 |
Fabrication and performance of novel RF spiral inductors on silicon |
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| Wang Xi-ning,Zhao Xiao-lin,Zhou Yong,Dai Xu-han,Cai Bing-chu. Fabrication and performance of novel RF spiral inductors on silicon[J]. Journal of Shanghai University(English Edition), 2005, 9(4): 361-364. DOI: 10.1007/s11741-005-0053-7 |
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| Authors: | Wang Xi-ning Zhao Xiao-lin Zhou Yong Dai Xu-han Cai Bing-chu |
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| Affiliation: | Key Laboratory for Thin Film and Micro Fabrication of Ministry of Education, Institute of Micro/ Nanometer Science and Technology, Snanghai Jiaotong University, Shanghai 200030, P.R. China |
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| Abstract: | This paper discusses fabrication and performance of novel circular spiral inductors on silicon. The substrate materials underneath the inductor coil are removed by wet etching process. In the fabrication process, fine polishing of the photoresist is used to simplify the processes and ensure perfect contact between the seed layer and the top of pillars. Dry etching technique is used to remove the seed layer. The results show that Q-factor of the inductor is greatly unproved by removing silicon underneath the inductor coil. The spiral inductor with line width of 50 fan has a peak Q-factor of 10 for the inductance of 2.5 nH at frequency of 1 GHz, and the resonance frequency of the inductor is about 8.5 GHz. For the inductor of conductor width of 80 μm, the peak Q-factor increases to about 17 for inductance of 1.5 nH in the frequency range of 0.05–3.00 GHz. |
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| Keywords: | radio frequency(RF) microelectromechanical systems(MEMS) circular spiral inductor silicon wet etching. |
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