| 一种新型亚阈值MOSFET电流模基准电路 |
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| 引用本文： | 王家鑫,王安福.一种新型亚阈值MOSFET电流模基准电路[J].郧阳师范高等专科学校学报,2008,28(6):18-20. |
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| 作者姓名： | 王家鑫 王安福 |
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| 作者单位： | 郧阳师范高等专科学校,物理与电子工程系,湖北,丹江口,442700 |
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| 摘 要： | 提出了一种结构新颖的亚阈值MOSFET电流模基准电路，利用反馈技术产生偏置于电流ICTAT的电流IPTAT,输出基准电压只是一个自变量（ICTAT）的函数，降低了其温漂系数．对电路进行了仿真，获得了较好的性能指标，这种电路结构在-20℃～100℃]温度范围内对输出基准电压进行很好的高阶温度曲率补偿，能够获得很低的温漂系数（TC｜TT约6．25ppm／℃），最小工作电压不大于1V．
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| 关 键 词： | 电流模基准电路 亚阈值MOSFET 反馈 CMOS集成电路 |
A New Subthreshold MOSFET's Current Model Reference Circuit |
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| WANG Jia-xing,WANG An-fu.A New Subthreshold MOSFET's Current Model Reference Circuit[J].Journal of Yunyang Teachers College,2008,28(6):18-20. |
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| Authors: | WANG Jia-xing WANG An-fu |
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| Institution: | WANG Jia-xing,WANG An-fu(Department of Physics,Yunyang Teachers\' College,Danjiangkou 442700,China) |
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| Abstract: | This paper has produced current model reference circuit of subthreshold MOSFET of a novel structure and made use of feedback technology to produce current IPTAT offsetting to current ICTAT,whose reference voltage has only one independent variable(ICTAT) function so that decreases its temperature coefficient.The authors have simulated the circuit and obtained effective performance indexes.This circuit structure has a better high-step temperature curvature compensation to output reference voltage when it is i... |
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| Keywords: | current model reference circuit subthreshold MOSFET feedback CMOS integral circuit |
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