| MOS二极管热弛豫时间的二维数值模拟 |
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| 引用本文： | 韩露,熊平. MOS二极管热弛豫时间的二维数值模拟[J]. 河北软件职业技术学院学报, 2009, 11(3): 58-61 |
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| 作者姓名： | 韩露 熊平 |
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| 作者单位： | 重庆邮电大学,重庆,400065;重庆光电技术研究所,重庆,400060 |
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| 摘 要： | 本文对二维半导体器件模拟软件MEDICI进行了简单介绍,运用MEDICI对MOS二极管进行瞬态分析,观察不同时刻载流子浓度和耗尽层宽度的变化,并讨论了热弛豫时间与器件衬底浓度的关系.
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| 关 键 词： | MEDICI MOS二极管 热弛豫时间 |
2-D Numerical Simulation of Thermal Relaxation Time of MOS Diode |
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| HAN Lu,XIONG Ping. 2-D Numerical Simulation of Thermal Relaxation Time of MOS Diode[J]. Journal of Hebei Software Institute, 2009, 11(3): 58-61 |
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| Authors: | HAN Lu XIONG Ping |
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| Affiliation: | 1.Chongqing University of Posts and Telecommunications;Chongqing 400065;China;2.Chongqing Optoelectronics Research Institute;Chongqing 400060;China |
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| Abstract: | The MEDICI software of two dimensional simulation of semiconductor device is briefly introduced.With the help of MEDICI,transient analysis is made on MOS diode.Then observe the changes of carrier concentration and width of depletion-layer.At last,the relationship of thermal relaxation time and substrate concentration of the device are discussed. |
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| Keywords: | MEDICI |
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