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Studies on GaN-based laser devices make progress |
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| Abstract: | A research team led by YANG Hui and CHEN Lianghui with the CAS Institute of Semiconductors (ISCAS) has made breakthrough progress in addressing key technological problems for the GaN-based laser diodes development. The research results were spoken highly at a panel meeting of experts held on 26 November, 2007 in Beijing. |
| Keywords: | progress make devices laser diodes Beijing research results panel meeting experts breakthrough problems development team YANG CHEN Institute Semiconductors |
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