| 氧等离子体处理聚硅烷涂层制备二氧化硅薄膜 |
| |
| 引用本文： | 向少华,谢茂浓. 氧等离子体处理聚硅烷涂层制备二氧化硅薄膜[J]. 怀化学院学报, 2002, 21(2): 48-50 |
| |
| 作者姓名： | 向少华 谢茂浓 |
| |
| 作者单位： | 1. 怀化学院,物理系,湖南,怀化,418008
2. 四川大学,物理系,四川,成都,610064 |
| |
| 基金项目： | 国家自然科学基金资助项目 (2 97710 2 4 ) |
| |
| 摘 要： | 用氧等离子体法在低温下已将自合成的聚硅烷涂层成功地转变为二氧化硅薄膜 红外光谱分析表明薄膜的Si-O伸缩振动特征峰为 10 75cm-1,并随处理时间的延长峰位向高波数移动 ,可至 10 88cm-1 光电子能谱测得薄膜中的O1s和Si2p的电子结合能分别为 5 33 0ev和 10 3 8ev ,硅氧原子接近化学计量比 拉曼光谱分析也表明薄膜中含有一个极大的拉曼特征峰
|
| 关 键 词： | 氧等离子体 聚硅烷涂层 二氧化硅薄膜 |
| 文章编号： | 1007-1814(2002)02-0048-03 |
| 修稿时间： | 2001-11-27 |
Preparation of Thin SiO2 Films from Polysilane Coatings Using Oxygen Plasma Method |
| |
| XIANG Shao-hua,XIE Mao-nong. Preparation of Thin SiO2 Films from Polysilane Coatings Using Oxygen Plasma Method[J]. Journal of Huaihua University, 2002, 21(2): 48-50 |
| |
| Authors: | XIANG Shao-hua XIE Mao-nong |
| |
| Abstract: | Silicon dioxide films were prepared successfully from self made polysilane coatings treated by oxygen plasma method at low temperature The result of IR,XPS and Raman showed that silicon dioxide films had an intense infrared absorption band of Si O at 1075cm -1 ,up to 1088cm -1 with the increasing of treatment time,O1s and Si2p binding energies of 533 0 ev and 103 8 ev,respectively,and an intense Raman characteristic peak The atom rations of O/Si was near to the stoichiometric |
| |
| Keywords: | O 2 plasma polysilane coating thin SiO 2 film |
| 本文献已被 CNKI 万方数据 等数据库收录！ |
|
