Theory and explicit formulas for the design of optimum non-reciprocal negative-resistance amplifiers

General relations for the design of negative–resistance amplifiers using tunnel diodes are derived. Using these relations, explicit formulas for the element values of an optimum non-reciprocal negative–resistance amplifier having Butterworth or Chebyshev transducer power-gain characteristics of arbitrary order are presented. In developing the theory and formulas, we allow the frequency-dependent load impedance, and also include the series parasitic inductance used in the equivalent circuit representation of a tunnel diode. Thus, the design of such amplifiers is reduced to simple arithmetic.