GaN基LED电流扩展效应的研究进展

与传统光源相比，GaN基发光二级管（LED）具有寿命长、节能、功耗低等优点，而优化LED有源区内电流扩展均匀性是提高u1D器件性能的关键。对国内外与u1D电流扩展相关的文献进行研究和归纳分析，结果表明，n型GaN层、P型Clan层、p型透明导电层、电极形状、芯片尺寸和器件结构等因素都会影响uTD有源区内的电流扩展均匀性。

Research Progress of Current Spreading in GaN-based Light-Emitting-Diode

GaN-based LED has many advantages such as long life, energy saving and low power dissipation, compared to traditional light sources. The key to improving the LED performance is to optimize the current spreading uniformity in active region of LED. By researching the progress of current spreading in LED, we can find that current spreading uniformity is affected by many factors including n-GaN layer, p-GaN layer, p type transparent conductive layer, electrode form, chip size and device configuration, etc.