Dependence of electrical and optical properties of IGZO films on oxygen flow |
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Authors: | SHI Ji-feng CHEN Long-long LI Qian LI Xi-feng ZHANG Jian-hua |
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Institution: | Key Laboratory of Advanced Display and System Application(Shanghai University), Ministry of Education, Shanghai 200072, P. R. China |
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Abstract: | Amorphous InGaZnO (a-IGZO) films were deposited on the corning eagle XG (EXG) glass substrates using magnetron sputtering
method. The structure, surface morphology, electrical and optical properties of these films were investigated by X-ray diffraction
(XRD), scanning electron microscopy (SEM), semiconductor parameter analyzer and spectrophotometry, respectively. The influence
of oxygen flow on the electrical properties of IGZO thin films was studied, showing that increasing oxygen flow changes the
resistivity with six orders of magnitude. The contact resistance of ITO/IGZO is 7.35×10−2 Ω·cm2, which suggests that a good ohmic contact exists between In2O3: Sn (ITO) and IGZO film. |
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Keywords: | InGaZnO (IGZO) sputtering contact resistance |
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