China's first ZnO nanorod field-effect transistor developed at CAS |
| |
Abstract: | Recently, an zinc oxide (ZnO) nanorod field-effect transistor (FET), the first of its kind as a nano-device in China,was successfully fabricated by scientists with the CAS Institute of Microelectronics (IME). |
| |
Keywords: | |
本文献已被 CNKI 万方数据 等数据库收录! |
|