| GaN基材料的特性及应用 |
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| 引用本文： | 郑冬梅.GaN基材料的特性及应用[J].三明学院学报,2005,22(2):150-154. |
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| 作者姓名： | 郑冬梅 |
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| 作者单位： | 三明学院,应用物理系,福建,三明,365004 |
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| 摘 要： | GaN具有禁带宽度大、热导率高、电子饱和漂移速度大和介电常数小等特点，在高亮度发光二极管、短波长激光二极管、高性能紫外探测器和高温、高频、大功率半导体器件等领域有着广泛的应用前景。
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| 关 键 词： | GaN 材料性质 半导体器件 应用 高亮度发光二极管 功率半导体器件 特性 材料 激光二极管 紫外探测器 |
| 收稿时间： | 2004-03-28 |
| 修稿时间： | 2004-03-28 |
Characteristics and Application of GaN-based Semiconductor Materials |
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| ZHENG Dong-mei.Characteristics and Application of GaN-based Semiconductor Materials[J].Journal of Sanming University,2005,22(2):150-154. |
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| Authors: | ZHENG Dong-mei |
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| Institution: | Applied Physics Department, Sanming College, Sanming 365004, China |
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| Abstract: | GaN materials have the characteristics of wide bandgap, high thermal conductivity, large electron saturation shift velocity and low dielectric constant. They have extensive application prospect in fields such as high brightness light emitting diodes, short wavelength laser diodes, high performance UV detector, and high temperature, high frequency, large power semiconductor devices. |
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| Keywords: | GaN characteristics of material semiconductor devices |
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