| 双槽栅SOI LDMOS器件结构及其制造方法研究 |
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| 引用本文： | 许生根,张海鹏,齐瑞生,陈波.双槽栅SOI LDMOS器件结构及其制造方法研究[J].科技通报,2011,27(2):258-262,267. |
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| 作者姓名： | 许生根 张海鹏 齐瑞生 陈波 |
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| 作者单位： | 杭州电子科技大学,电子信息学院,杭州310018 |
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| 基金项目： | 863计划资助项目(AA09Z239); 浙江省科技计划资助项目(2009C21G2040066) |
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| 摘 要： | 提出了一种具有双槽栅(DTG)SOI LDMOS新结构及其制造方法.与单槽栅(STG)SOI LDMOS相比,DTG SOI LDMOS具有更高的占穿电压,更低的通态电阻,更高的跨导.通过Silvaco TCAD对该结构进行了工艺仿真和器件电学特性模拟,结果表明DTG SOI LDMOS器件不仅具有较好的电学性能,而且...
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| 关 键 词： | 微电子学与固体电子学 双槽栅 SOI LDMOS 电学特性 制造方法 |
Device Structure and Fabricating Method for SOI LDMOS with Double Trench Gates and Plates |
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| XU Shenggen,ZHANG Hoipeng,QI Ruisheng,CHEN Bo.Device Structure and Fabricating Method for SOI LDMOS with Double Trench Gates and Plates[J].Bulletin of Science and Technology,2011,27(2):258-262,267. |
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| Authors: | XU Shenggen ZHANG Hoipeng QI Ruisheng CHEN Bo |
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| Institution: | XU Shenggen,ZHANG Haipeng,QI Ruisheng,CHEN Bo(School of Electronics & Information,Hangzhou Dianzi University,Hangzhou 310018,China) |
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| Abstract: | A novel SOI LDMOS with Double Trench Gate(DTG) and its fabrication method were proposed in turn.DTG SOI LDMOS has advantages of higher breakdown voltage,lower on-resistance,higher transconductance over Single Trench Gate(STG) SOI LDMOS.Simulated results on process and electrical characteristics obtained with Silvaco TCAD indicate that the proposed DTG SOI LDMOS cell not only has better electrical characteristics,but also is feasible to be fabricated in SOI CMOS technologies. |
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| Keywords: | microelectronics and solid state electronics double trench gate SOI LDMOS electrical characteristics fabrication method |
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