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Nanophotonics and negative ε materials
引用本文:THYLIEN Lars BERGLIND Eilert. Nanophotonics and negative ε materials[J]. 浙江大学学报(A卷英文版), 2006, 7(1): 41-44. DOI: 10.1631/jzus.2006.A0041
作者姓名:THYLIEN Lars BERGLIND Eilert
作者单位:Department of Microelectronics and Information Technology Royal Institute of Technology 164 40 Stockholm Sweden Kista Photonics Research Center 164 40 Stockholm Sweden Joint Research Center of Photonics of the Royal Institute of Technology Stockholm Sweden and Zhejiang University Hangzhou 310027 China,Department of Microelectronics and Information Technology Royal Institute of Technology 164 40 Stockholm Sweden Kista Photonics Research Center 164 40 Stockholm Sweden
基金项目:Project supported by the Swedish Foundation for Strategic Research
摘    要:INTRODUCTION Photonics circuits or integrated optics circuits are currently orders of magnitude larger in physical dimensions than their electronic counterparts. Whereas FET type transistors have lengths on the order of 50 nm passive optical devices, even those based on photonics crystals have sizes on the order of wavelength of 1 μm. For active devices the sizes are even larger, essentially depending on the matrix element of the interaction of interest. Regarding the packing density de…

关 键 词:纳米光子学 光表面波 综合光路 光波导 微波电路
收稿时间:2005-10-30
修稿时间:2005-11-16

Content-adaptive robust error concealment for packet-lossy H.264 video streaming
Liao Ning,Yan Dan,Quan Zi-yi,Men Ai-dong. Content-adaptive robust error concealment for packet-lossy H.264 video streaming[J]. Journal of Zhejiang University Science, 2006, 7(1): 41-44. DOI: 10.1631/jzus.2006.A0041
Authors:Liao Ning  Yan Dan  Quan Zi-yi  Men Ai-dong
Affiliation:(1) Department of Microelectronics and Information Technology, Royal Institute of Technology, 164 40 Stockholm, Sweden;(2) Kista Photonics Research Center, 164 40 Stockholm, Sweden;(3) Joint Research Center of Photonics of the Royal Institute of Technology, Stockholm, Sweden;(4) Zhejiang University, Hangzhou, 310027, China
Abstract:The feasibility of using metal optics or negative ɛ materials, with the aim of reducing the transversal extent of waveguided photonic fields to values much less than the vacuum wavelength, in order to achieve significantly higher densities of integration in integrated photonics circuits that is possible today is discussed. Relevant figures of merit are formulated to this end and used to achieve good performance of devices with today’s materials and to define required improvements in materials characteristics in terms of decreased scattering rates in the Drude model. The general conclusion is that some metal based circuits are feasible with today’s matals. Frequency selective metal devices will have Q values on the order of only 10∼100, and significant improvements of scattering rates or lowering of the imaginary part of ɛ have to be achieved to implement narrowband devices. A photonic “Moore’s law” of integration densities is proposed and exemplified. Project supported by the Swedish Foundation for Strategic Research
Keywords:Integrated optics circuit   Optical surface wave   Optical waveguide   Microwave circuit   Waveguide
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