| 射频溅射GaxIn1-xAs薄膜的外延生长及其物理性能研究 |
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| 引用本文： | 黎锡强. 射频溅射GaxIn1-xAs薄膜的外延生长及其物理性能研究[J]. 上海大学学报(英文版), 2000, 4(2) |
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| 作者姓名： | 黎锡强 |
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| 作者单位： | 1*2。23，ZX，PY-W] Received Apr. 23，1999; Revised Oct. 22，1999 |
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| 摘 要： | 1 Ｉｎｔｒｏｄｕｃｔｉｏｎ Ｔｈｅｓｐｕｔｔｅｒｉｎｇｔｅｃｈｎｉｑｕｅｗｅｌｌｓｕｉｔｓｔｈｅｇｒｏｗｔｈｏｆｃｏｍｐｏｕｎｄｓａｎｄａｌｌｏｙｓ ,ｗｈｏｓｅｅｌｅｍｅｎｔａｌｃｏｎｓｔｉｔｕｅｎｔｓｈａｖｅｓｉｇｎｉｆｉｃａｎｔｌｙｄｉｆｆｅｒｅｎｔｍｅｌｔｉｎｇ ｐｏｉｎｔｓａｎｄｖａｐｏｒｐｒｅｓｓｕｒｅｓ.ＡｃｏｎｓｉｄｅｒａｂｌｅａｍｏｕｎｔｏｆｗｏｒｋｓａｂｏｕｔｒｆｓｐｕｔｔｅｒｄｅｐｏｓｉｔｉｏｎｏｆｂｉｎａｒｙⅢ Ⅴｃｏｍｐｏｕｎｄｆｉｌｍｓｈａｓｂｅｅｎｐｕｂｌｉｓｈｅｄ[1～…
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Epitaxial Growth of GaxIn1-xAs Film by RF Sputtering and Physical Properties of the Films |
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| LI Xi-qiang. Epitaxial Growth of GaxIn1-xAs Film by RF Sputtering and Physical Properties of the Films[J]. Journal of Shanghai University(English Edition), 2000, 4(2) |
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| Authors: | LI Xi-qiang |
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| Abstract: | Single crystal GaxIn1- xAs films have grown up on GaAs(100) substrate at 375℃ and on InP(100) substrate at 390℃, respectively, by the method of rf-sputtering with using undoped GaInAs polycrystal as target. However, on Si(100) or Si( 111 ) substrates at 260 ～390℃, even at 465℃, only polycrystalline films were obtained. In addition, the structure, composition, electrical characteristic and optical properties of the GaxIn1- xAs films were investigated using X-ray diffraction (XRD), reflection of high energy electron diffraction (RHEED), energy dispersion analyzer of X-ray (EDAX), Hall measurements and spectroscopic ellipsometry. |
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| Keywords: | single crystal polycrystalline film structure substrate temperature optical parameters |
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