| 铝诱导非晶硅场致晶化检测方法的比较 |
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| 引用本文： | 陈一匡.铝诱导非晶硅场致晶化检测方法的比较[J].韩山师范学院学报,2006,27(6):38-42. |
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| 作者姓名： | 陈一匡 |
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| 作者单位： | 韩山师范学院,物理与电子工程系,广东潮州,521041 |
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| 基金项目： | 韩山师范学院校科研和教改项目 |
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| 摘 要： | 非晶硅晶化的检测仪器有很多,主要有扫描电子显微镜、X射线衍射仪和喇曼谱仪.采用上述检测仪器检测铝诱导非晶硅样品的场致晶化,讨论了各种检测手段对分析铝诱导非晶硅场致晶化情况的影响和意义。
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| 关 键 词： | 铝诱导 非晶硅 场致晶化 |
| 文章编号： | 1007-6883（2006）06-0038-05 |
| 收稿时间： | 2006-04-17 |
| 修稿时间： | 2006-04-17 |
A Comparison of the Test Methods of Aluminum-induced Crystallization of A-si in an Electric Field |
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| CHEN Yi-kuang.A Comparison of the Test Methods of Aluminum-induced Crystallization of A-si in an Electric Field[J].Journal of Hanshan Teachers College,2006,27(6):38-42. |
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| Authors: | CHEN Yi-kuang |
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| Institution: | Department of Physics and Electronics Engineering, Hanshan Normal University, Chaozhou 521041, China |
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| Abstract: | There are many test apparatus such as scanning electron microscopy(SEM),x-ray diffraction(XRD)and Raman spectroscopy for crystallization of amorphous silicon(a-Si).The differences among the three test methods for aluminum-induced crystallization of a-Si in an electric field are elucidated in this article. |
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| Keywords: | aluminum-induced amorphous silicon electric field |
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