| 反应磁控溅射Cu2 O薄膜的结构和电学性质 |
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| 引用本文： | 肖荣辉,林丽梅,郑明志,彭福川,郑冬梅.反应磁控溅射Cu2 O薄膜的结构和电学性质[J].闽江学院学报,2010,31(5):22-25. |
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| 作者姓名： | 肖荣辉 林丽梅 郑明志 彭福川 郑冬梅 |
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| 作者单位： | 1. 三明学院物理与机电工程系,福建,三明,365004
2. 福建师范大学物理与光电信息科技学院,福建,福州,350007 |
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| 基金项目： | 福建省自然科学基金资助项目，福建省教育厅基金资助项目，福建省教育厅科技项目，三明学院科学研究发展基金资助项目 |
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| 摘 要： | 用X射线衍射仪检测薄膜的结构;用分光光度计测量薄膜的透射率和反射率,采用拟合正入射透射谱数据的方法计算薄膜的厚度;用Van der Pauw方法测量薄膜表面电阻和霍尔迁移率,并计算出电阻率和载流子浓度.结果表明,生成单相Cu2O薄膜的氧气流量范围很小,在氧气流量为5-7sccm范围,薄膜主要成分为Cu2O,其中氧氩流量比为6∶25时,生成单相多晶结构的Cu2O薄膜,其表面电阻0.68MΩ/□,电阻率58.29Ω.cm,霍尔迁移率4.73cm2·V-1·s-1,载流子浓度3×1016cm-3.
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| 关 键 词： | Cu2O 反应磁控溅射 结构 电学性质 |
Structural and electrical properties of Cu2O films deposited by DC veactive magnetron sputtering |
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| XIAO Rong-hui,LIN Li-mei,ZHENG Ming-zhi,PENG Fu-chuan,ZHENG Dong-mei.Structural and electrical properties of Cu2O films deposited by DC veactive magnetron sputtering[J].Journal of Minjiang University,2010,31(5):22-25. |
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| Authors: | XIAO Rong-hui LIN Li-mei ZHENG Ming-zhi PENG Fu-chuan ZHENG Dong-mei |
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| Institution: | 1. Department of Physics,Mechanical and Electric engineering,SanMing University,Sanming,Fujian 365004,China; 2. School of Physics and OptoElectronics Technology,Fujian Normal University,Fuzhou,Fujian 350007,China) |
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| Abstract: | The microstructure,surface morphology and optical transmittance of the films were investigated by X-ray diffractometer,atomic force microscopy and double-beam spectrophotometer,respectively. The electrical parameters were measured by van der Pauw method. The results indicated that the main component is Cu2O when oxygen flows rates were between 5 and 7 sccm. When the rate of oxygen and argon flow rate is 6∶ 25,the single-phase polycrystalline structure of Cu2O film has been deposited. The surface re-sistance,resistivity,hall mobility and carrier concentration of the Cu2O film are 0. 68 MΩ/□,58. 29 Ω. cm,4. 73 cm2·V -1·s -1 and 3 × 1016 cm -3,respectively. |
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| Keywords: | Cu2O |
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