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| bservation. We | |
| 作者姓名： | observ |
| 摘 要： | ed that the Ge content in the oxide layer increased with the Ge content in SiGe layers, Ge content in the oxide film decreased with the increase of oxidation temperature and with the increase of time length. Rejection of Ge results in piling up of Ge at the interface between the growing SiO2 and the remaining SiGe which for |
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