| Electrical Characterization of Semiconductor Diode Using Alternating Signal Measurements at Forward Bias |
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| 作者姓名： | 赵锋 沈君 朱传云 李乐 王存达 |
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| 作者单位： | School of Sciences，School of Sciences，School of Sciences，School of Sciences，School of Sciences Tianjin University，Tianjin 300072，China，Tianjin University，Tianjin 300072，China，Tianjin University，Tianjin 300072，China，Tianjin University，Tianjin 300072，China，Tianjin University，Tianjin 300072，China |
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| 摘 要： | TheelectricalcharacterizationofSchottkyandp njunctiondiodesasthesimplestdeviceshasbeenanimportantsubjectforoverhalfacentury .WebelievethattheDCcur rent voltage (I V)measurementsarethemosthelpfulmethodstocharacterizetheparametersofdiodesuntilnow .Manytechniques ,foranalysisofI Vplotatforwardbias,areusedtoextractthediodeparameters1— 17] .However,anI Vplotitselfcanprovidemerelyafinitequantityofinformation ,henceeachtechniquehasitsownlimitationsandisvalidonlyfortoosimpleassumptionsonthediode…
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Electrical Characterization of Semiconductor Diode Using Alternating Signal Measurements at Forward Bias |
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| ZHAO Feng,SHEN Jun,ZHU Chuan-yun,LI Le,WANG Cun-da.Electrical Characterization of Semiconductor Diode Using Alternating Signal Measurements at Forward Bias[J].Transactions of Tianjin University,2003,9(3). |
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| Authors: | ZHAO Feng SHEN Jun ZHU Chuan-yun LI Le WANG Cun-da |
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| Abstract: | The general analysis of the forward AC behavior of a semiconductor diode under series mode is pre- sented for the first time.A new method without any particular assumption to characterize a diode was developed. This method can accurately measure the dependence of series resistance, junction capacitance, junction vol- tage, ideality factor, and interfacial layer impedance on forward biases. The measurements confirm that the ne- gative capacitance (NC) of Schottky diode is an effect of the junction, and the interfacial layer can be consi- dered as a layer structure with nonlinear resistance and capacitance. |
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| Keywords: | semiconductor diode forward electrical characterization negative capacitance interfacial layer GaN |
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