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| 射频MEMS开关中金属剥离工艺研究 | |
| 引用本文： | 陈光红,吴清鑫,于映,罗仲梓.射频MEMS开关中金属剥离工艺研究[J].苏州市职业大学学报,2012,23(2):10-13. |
| 作者姓名： | 陈光红 吴清鑫 于映 罗仲梓 |
| 作者单位： | 1. 苏州市职业大学电子信息工程系,江苏苏州,215104 2. 南京邮电大学通讯与信息工程学院,江苏南京,210003 3. 厦门大学萨本栋微机电研究中心,福建厦门,361005 |
| 基金项目： | 国家青年基金资助项目(60301006);福建省自然科学基金资助项目(A0310012) |
| 摘 要： | 研究用BP212正性光刻胶（浸泡氯苯）、AZP4620正性光刻胶（浸泡氯苯）、AZ5214E反转光刻胶光刻后的图形剥离金属的难易度及图形质量．用扫描电镜（SEM）观察不同光刻胶及浸泡氯苯后的侧壁图形，并分析不同侧壁图形的形成机理，找出最佳工艺参数，并应用于射频MEMS开关制作中的金属剥离． |
| 关 键 词： | BP212 AZP4620 AZ5214E 氯苯浸泡 剥离 |
Investigation for Metal Lift-off Process in RF MEMS Switch |
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| CHEN Guang-hong,WU Qing-xin,YU Ying,LUO Zhong-zi.Investigation for Metal Lift-off Process in RF MEMS Switch[J].Journal of Suzhou Vocational University,2012,23(2):10-13. | |
| Authors: | CHEN Guang-hong WU Qing-xin YU Ying LUO Zhong-zi |
| Institution: | 1.Department of Electronic Information Engineering,Suzhou Vocational Uiversity,Suzhou 215104,China;2.College of Telecommunications & Information Engineering,Nanjing University of Posts and Telecommunications,Nanjing 210003,China;3.Pen-Dung Sah MEMS Research Center,Xiamen University,Xiamen 361005,China) |
| Abstract: | The lift-off processes of BP212 positive photoresist(and chlorobenzene treatment) and AZP4620 positive photoresist(and chlorobenzene treatment) were studied.AZ5214E image-reversal photoresist was also studied.Side wall graphics were observed using scanning electron microscope(SEM).The forming mechanism of different lateral wall pattern was analysed.The optimum process parameters were found and used in metal lift-off in RF MEMS switches. |
| Keywords: | BP212 AZP4620 AZ5214E chlorobenzene treatment lift-off |
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